PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 30 (7/38) AWG Tinned Copper 0.012 b) Insulation 0.010 Wall, Nom. PVC 0.032 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 3 WHITE 2) Cable Assembly 3 Components Cabled a) Twists: 40.0

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor

Type KX Thermocouple, 1 Pr #16 Sol, FEP Ins Yel, Red, OS, Yellow FEP Jkt,300V PLTC CL2P 200C SUN RES

Product Description Type KX Thermocouple, 1 Pair 16AWG (Solid) Chromel+Alumel, FEP Insulation Yel, Red Color Code, Overall Beldfoil® Shield, Yellow FEP Outer Jacket, PLTC CL2P 200C SUN RES

Drywall Punch

文件：1.8415 Mbytes Page：16 Pages