PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Bandpass YIG Filters

封装/外壳：2-SMD，无引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：2.8(L)X 1.2 (W)X 0.8 (H) MM IRP 光电器件 LED 发射器 - 红外，紫外，可见光

发光二极管/LED

Bandpass YIG Filters

包装：散装 描述：LENS CLEAR 48DEG WIDE ADHESIVE 光电器件 光学 - 镜头

For ATO Fuses In-Line Type

文件：59.61 Kbytes Page：1 Pages

For ATO Fuses In-Line Type

文件：59.61 Kbytes Page：1 Pages

For ATO Fuses In-Line Type

文件：59.61 Kbytes Page：1 Pages

For ATO Fuses In-Line Type

文件：59.61 Kbytes Page：1 Pages

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages