| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EX800 | ExStik짰 4-in-1 Water Quality Meter Kits ExStik® Waterproof Refillable pH Meter Features flat surface electrode, RENEW and CALibration alerts, memory, and bargraph Indicator tells you it’s time to replace your electrode and eliminates guesswork Features: ✓ Refillable pH electrode is easily serviced. Fresh reference solution maint | EXTECH | ||
EX800 | 包装:散装 描述:EXSTIK 3 IN 1 KIT (CL, PH, TEMP) 测试与计量 设备 - 环境检测仪 | ETC 知名厂家 | ETC | |
EX800 | 包装:散装 描述:EXSTIK 3 IN 1 KIT (CL, PH, TEMP) 测试与计量 设备 - 环境检测仪 | ETC 知名厂家 | ETC | |
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | |||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | |||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, | NEC 瑞萨 | |||
NSC800TM High-Performance Low-Power CMOS Microprocessor 文件:785.95 Kbytes Page:76 Pages | NSC 国半 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
DIP |
960 |
EX800规格书下载地址
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