Universal PLC Modem SoC

The EV8000 is a highly integrated system-on-chip (SoC) solution that combines a complete PLC modem including AFE, PHY, MAC and upper layers up to and including IPV6 to offer the entire siliconrequirements of a PLC modem in one chip.\n The EV8000 offers multi-mode modulation supporting advanced OF • Complete single chip multi-mode PLC display modem solution supporting OFDM Modulation\n• Integrated AFE (Analog Front End), PHY (Physical Layer), MAC (Media Access Control) and Upper\n• Layers (up to and including IPV6)\n• Integrated 32-bit RISC microcontroller with 384 KB SRAM and a default of 2M;

Evaluation Kit User

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IEEE 802.3af/at PoE Powered Device Interface Controller Evaluation Board

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13W 802.3af PoE Powered Device Interface with Flyback DC-DC Converter EV Board

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IEEE 802.3af PoE PD Interface with 13W Primary-side Regulated Flyback Converter

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IEEE 802.3af PoE PD Interface with 13W Primary-side Regulated Flyback Converter

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IEEE 802.3af PoE PD Interface with 13W Primary-side Regulated Flyback Converter

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Fully-Integrated IEEE 802.3af/at-Compliant PoE PD Interface with Peak Current Mode Flyback Controller Evaluation Board

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Fully-Integrated IEEE 802.3af/at-Compliant PoE PD Interface with Peak Current Mode Flyback Controller Evaluation Board

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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