位置：首页 > IC中文资料第12863页 > ET4N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ET4N60 | 600V, 4A, N-Channel Power MOSFET 文件：325.31 Kbytes Page：8 Pages | ESTEK 伊泰克电子 |   | |
600V, 4A, N-Channel Power MOSFET 文件：325.31 Kbytes Page：8 Pages | ESTEK 伊泰克电子 | | ||
600V, 4A, N-Channel Power MOSFET 文件：325.31 Kbytes Page：8 Pages | ESTEK 伊泰克电子 | | ||
600V, 4A, N-Channel Power MOSFET 文件：325.31 Kbytes Page：8 Pages | ESTEK 伊泰克电子 | | ||
600V, 4A, N-Channel Power MOSFET 文件：325.31 Kbytes Page：8 Pages | ESTEK 伊泰克电子 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | | ||
PowerMOS transistors Avalanche energy rated 文件：80.57 Kbytes Page：9 Pages | PHILIPS 飞利浦 | |
ET4N60产品属性
- 类型
描述
- 型号
ET4N60
- 制造商
ESTEK
- 制造商全称
ESTEK
- 功能描述
600V, 4A, N-Channel Power MOSFET
ET4N60规格书下载地址
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2019-3-6
DdatasheetPDF页码索引
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