NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL ■

NPN DARLINGTON POWER MODULE

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE (2500V RMS) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL ■ SMPS & UPS ■ WELDING EQUIPMENT

NPN DARLINGTON POWER MODULE

LOW INTERNAL PARASITIC INDUCTANCE\nEASY TO MOUNT\nHIGH CURRENT POWER BIPOLAR MODULE\nSPECIFIED ACCIDENTAL OVERLOAD AREAS\nVERY LOW R\nth JUNCTION CASE\nFULLY INSULATED PACKAGE (UL COMPLIANT)\nULTRAFAST FREEWHEELING DIODE;

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL ■

封装/外壳：ISOTOP 包装：散装 描述：TRANS NPN DARL 450V 72A ISOTOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN DARLINGTON POWER MODULE

文件：388.06 Kbytes Page：8 Pages

封装/外壳：ISOTOP 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 450V 84A ISOTOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN DARLINGTON POWER MODULE

文件：388.06 Kbytes Page：8 Pages

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity