位置:首页 > IC中文资料 > ESD652DBZR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ESD652DBZR | 丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | ||
ESD652DBZR | 丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | ||
ESD652DBZR | 丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | ||
丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | |||
丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | |||
ESD652-Q1 Automotive 18V Bi-Directional ESD Protection in SOT-23 for In-Vehicle Networks 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | |||
丝印代码:37M8;ESD652-Q1 Automotive 18V Bi-Directional ESD Protection in SOT-23 for In-Vehicle Networks 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | |||
ESD652-Q1 Automotive 18V Bi-Directional ESD Protection in SOT-23 for In-Vehicle Networks 1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel | TI 德州仪器 | |||
PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A | POINN | |||
Octal bus transceiver/register; 3-state DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab | PHILIPS 飞利浦 | |||
RF POWER TRANSISTORS NPN SILICON The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 ( | MOTOROLA 摩托罗拉 | |||
RF POWER TRANSISTORS NPN SILICON The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 ( | MOTOROLA 摩托罗拉 | |||
DIFFERENTIAL VARIABLE GAIN AMPLIFIER DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52 | STMICROELECTRONICS 意法半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WEITRON |
23+ |
SOT-363 |
50000 |
原装正品 支持实单 |
|||
AVX |
24+ |
SMD |
45592 |
CAPCER1UF50V10%X7R1206 |
|||
ON |
2019+ |
SC88 |
6532 |
全新 发货1-2天 |
|||
SUNMATE(森美特) |
2019+ROHS |
SOT-363 |
66688 |
森美特高品质产品原装正品免费送样 |
|||
ON |
SC88 |
6500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
WEITRON |
24+ |
SOT-363 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON |
19+ |
SC88 |
200000 |
||||
AVX |
23+ |
SMD |
6800 |
专注配单,只做原装进口现货 |
|||
ON/安森美 |
2026+ |
SC88 |
28570 |
原装正品,假一罚十! |
|||
CNNPCHIP/新晶微/RS |
2026+PB |
SOT-23 |
90000 |
全新Cnnpchip |
ESD652DBZR芯片相关品牌
ESD652DBZR规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-11
DdatasheetPDF页码索引
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