型号 功能描述 生产厂家 企业 LOGO 操作
ESD652DBZR

丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

ESD652DBZR

丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

ESD652DBZR

丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

丝印代码:37K8;ESD652 18V Bi-Directional ESD Protection in SOT-23

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

ESD652-Q1 Automotive 18V Bi-Directional ESD Protection in SOT-23 for In-Vehicle Networks

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

丝印代码:37M8;ESD652-Q1 Automotive 18V Bi-Directional ESD Protection in SOT-23 for In-Vehicle Networks

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

ESD652-Q1 Automotive 18V Bi-Directional ESD Protection in SOT-23 for In-Vehicle Networks

1 Features • IEC 61000-4-5 surge protection: – 5.5A (8/20μs) • IEC 61000-4-2 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • 18V working voltage • I/O Capacitance: – 4pF (typical) • Bidirectional polarity to support positive and negative voltage swings • 2 channel

TI

德州仪器

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

POINN

Octal bus transceiver/register; 3-state

DESCRIPTION The 74HC/HCT652 are high-speed SI-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with Jedec standard no. 7A. FEATURES • Multiplexed real-time and stored data • Independent register for A and B buses • Independent enab

PHILIPS

飞利浦

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

MOTOROLA

摩托罗拉

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN SILICON RF POWER TRANSISTORS Designedfor 12.5 Vdc UHFlarge–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65 (

MOTOROLA

摩托罗拉

DIFFERENTIAL VARIABLE GAIN AMPLIFIER

DESCRIPTION The TS652 is a differential digitally controled variable gain amplifier featuring a high slew rate of 90V/µs, a large bandwidth, a very low distortion and a very low current and voltage noise. ■ LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52

STMICROELECTRONICS

意法半导体

更新时间:2026-3-14 18:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WEITRON
23+
SOT-363
50000
原装正品 支持实单
AVX
24+
SMD
45592
CAPCER1UF50V10%X7R1206
ON
2019+
SC88
6532
全新 发货1-2天
SUNMATE(森美特)
2019+ROHS
SOT-363
66688
森美特高品质产品原装正品免费送样
ON
SC88
6500
一级代理 原装正品假一罚十价格优势长期供货
WEITRON
24+
SOT-363
9600
原装现货,优势供应,支持实单!
ON
19+
SC88
200000
AVX
23+
SMD
6800
专注配单,只做原装进口现货
ON/安森美
2026+
SC88
28570
原装正品,假一罚十!
CNNPCHIP/新晶微/RS
2026+PB
SOT-23
90000
全新Cnnpchip

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