高性能以太网交换芯片

楠菲微电子研发设计的ES8000-64高性能、高连接性以太网络交换芯片，单芯片提供高达6.4Tb/s的带宽。最高支持16×400GE ，32×100GE/200GE，64×25GE/50GE/100GE交换端口。\r\n\r\n ES8000-64架构提供完整L2、L3、L4网络协议以及数据中心和城域以太网的相关特性，符合IEEE 802.3bs和802.3cd规范，可以灵活地配置为10/25/40/50/100/200GE/400GE端口。ES8000-64交换芯片用于构建可扩展、经济高效的ToR交换机，汇聚和核心交换机。 • 最高6.4Tbps交换容量\r\n• 基于无阻塞交换、多端口表查找和大容量共享报文缓冲技术\r\n• 支持INT带内网络遥测技术\r\n• 支持多级QoS调度\r\n• 采用14nm工艺，FCBGA封装\r\n• 配套完整的SDK开发环境;

Replacement Elements

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Replacement Elements

文件：132.74 Kbytes Page：3 Pages

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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