SUPERFAST RECOVERY RECTIFIERS

VOLTAGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package has

ISOLATION SUPERFAST RECOVERY RECTIFIERS

VOLTAGE - 50 to 400 Volts CURRENT - 8.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forwar

8.0A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Super-Fast Switching ● Low Forward Voltage Drop ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O Mechanical Data ● Case: ITO-220A, Full Molded Plastic ● Terminal

ISOLATION SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 400 Volts CURRENT - 8.0 Amperes)

VOLTAGE 50 to 400 Volts CURRENT 8.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package h

8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER

Glass Passivated Die Construction Superfast 35nS and 50nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

ISOLATION SUPERFAST RECOVERY RECTIFIERS

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Super Fast Rectifiers

极快速恢复整流器

8.0A GLASS PASSIVATED SUPERFAST RECTIFIER

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封装/外壳：TO-220-2 全封装，隔离接片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ITO-220AC, SUPER 分立半导体产品 二极管 - 整流器 - 单

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat