位置:首页 > IC中文资料第7308页 > ER802D

型号 功能描述 生产厂家 企业 LOGO 操作
ER802D

D2PAK SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER

VOLTAGE - 50 to 400 Volts CURRENT - 8.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forwar

TRSYS

Transys Electronics

8.0A D2PAK SURFACE MOUNT SUPER FAST RECTIFIEIR

Features ● Glass Passivated Die Construction ● Ideally Suited for Automatic Assembly ● Low Profile Package ● High Surge Current Capability ● Low Power Loss, High Efficiency ● Super-Fast Recovery Time ● Plastic Case Material has UL Flammability Classification Rating 94V-O

WTE

Won-Top Electronics

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

MOTOROLA

摩托罗拉

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

MOTOROLA

摩托罗拉

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

MOSPEC

统懋

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

ER802D产品属性

  • 类型

    描述

  • 型号

    ER802D

  • 制造商

    TRSYS

  • 制造商全称

    Transys Electronics

  • 功能描述

    D2PAK SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER

ER802D数据表相关新闻