面向车载应用的100 V、75 A增强型氮化镓功率晶体管

• 开关频率更快 – 更低开关损耗及更低驱动功率\n• 效率更高 - 更低传导及开关损耗、零反向恢复损耗\n• 占板面积更小– 实现更高功率密度的电源转换;

EPC2212 - Automotive 100 V (D-S) Enhancement Mode Power Transistor

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

NPN SILICON BIAS RESISTOR TRANSISTOR

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SINGLE-SLOT, PARALLEL INTERFACE POWER SWITCH FOR LOW POWER PC CARD SLOTS

文件：296.94 Kbytes Page：20 Pages