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EPC2104

增强型功率晶体管

• 开关频率更快 –更低开关损耗、更低寄生电感及更低驱动功率\n• 效率更高 – 更低传导及开关损耗、零反向恢复损耗\n• 占板面积更小 - 实现更高功率密度;

EPC

EPC2104

Enhancement-Mode GaN Power Transistor Half-Bridge

文件:1.66643 Mbytes Page:7 Pages

EPC-CO

256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr

MOTOROLA

摩托罗拉

256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m

MOTOROLA

摩托罗拉

3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM)

TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios.

TOSHIBA

东芝

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

SUTEX

EPC2104产品属性

  • 类型

    描述

  • 配置:

    半桥

  • VDS最大值:

    100

  • VGS最大值:

    6

  • RDS(on)(mΩ)最大值@5VGS:

    6.8

  • QG(nC)典型值:

    6.8

  • QGS(nC)典型值:

    2.3

  • QGD(nC)典型值:

    1.4

  • QOSS(nC)典型值:

    35

  • ID (A):

    30

  • 脉冲电流 ID (A):

    180

  • 封装(mm):

    BGA 6.05x2.3

更新时间:2026-5-22 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EPC
20+
Die
3000
EPC
21+
BGA
487
只做原装鄙视假货15118075546
EPC
22+
Die
9000
原厂渠道,现货配单
26+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
EPC
25+
模具
326
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