TP2104价格
参考价格:¥2.0191
型号:TP2104K1-G 品牌:Supertex 备注:这里有TP2104多少钱,2026年最近7天走势,今日出价,今日竞价,TP2104批发/采购报价,TP2104行情走势销售排行榜,TP2104报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TP2104 | P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | ||
TP2104 | P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | ||
TP2104 | P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | ||
TP2104 | MOSFET, P-Channel Enhancement-Mode, -40V, 6.0 Ohm This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature High input impedance and high gain \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nFree from secondary breakdown; | MICROCHIP 微芯科技 | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology\nThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance ❏ Free from secondary breakdown\n❏ Low power drive requirement\n❏ Ease of paralleling\n❏ Low CISS and fast switching speeds\n❏ Excellent thermal stability\n❏ Integral Source-Drain diode\n❏ High input impedance and high gain\n❏ Complementary N- and P-channel devicesApplications\n❏ Logic level interfa; | MICROCHIP 微芯科技 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology\nThese enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance ❏ Free from secondary breakdown\n❏ Low power drive requirement\n❏ Ease of paralleling\n❏ Low CISS and fast switching speeds\n❏ Excellent thermal stability\n❏ Integral Source-Drain diode\n❏ High input impedance and high gain\n❏ Complementary N- and P-channel devicesApplications\n❏ Logic level interfa; | MICROCHIP 微芯科技 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in | SUTEX | |||
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr | MOTOROLA 摩托罗拉 | |||
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m | MOTOROLA 摩托罗拉 | |||
3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM) TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios. | TOSHIBA 东芝 |
TP2104产品属性
- 类型
描述
- BVdss min (V):
-40
- Rds (on) max (Ohms):
6
- Vgs(th) max (V):
-2.0
- CISSmax (pF):
60
- Packages:
3\\SOT-233\\TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
MICROCHIP/美国微芯 |
25+ |
SOT-23(SOT-23-3) |
30000 |
原装正品公司现货,假一赔十! |
|||
MICROCHIP |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
SUPERTEX |
新年份 |
SOT-23 |
45000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
MICROCHIP/美国微芯 |
21+ |
SOT-23(SOT-23-3) |
10000 |
只做原装,质量保证 |
|||
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
|||
SUPERTE |
23+ |
SOT-23 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
MICROCHIP/美国微芯 |
24+ |
SOT-23(SOT-23-3) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
SUPERTEX |
25+ |
原装 |
32000 |
SUPERTEX全新特价TP2104K1即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
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