EPC2046 - Enhancement-Mode Power Transistor

·Higher Switching Frequency – Lower switching losses and lower drive power\n·Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses\n·Smaller Footprint - Higher power density;

Development Board EPC9079 Quick Start Guide

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UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

DUAL CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

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4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：323.94 Kbytes Page：21 Pages

4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：230.97 Kbytes Page：16 Pages