DUAL CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

features 135-mW -Maximum (5-V Input) High-Side MOSFET Switch 250 mA Continuous Current per Channel Independent Short-Circuit and Thermal Protection With Overcurrent Logic Output Operating Range . . . 2.7-V to 5.5-V Logic-Level Enable Input 2.5-ms Typical Rise Time Undervoltage Lockout 10

封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC PWR SWITCH N-CHANNEL 1:2 8DIP 集成电路（IC） 配电开关，负载驱动器

DUAL CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：410.8 Kbytes Page：23 Pages

DUAL CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：575.17 Kbytes Page：25 Pages

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：323.94 Kbytes Page：21 Pages

4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：230.97 Kbytes Page：16 Pages