型号 功能描述 生产厂家&企业 LOGO 操作
EN29F040A

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10µs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EON

4Mbit512Kbx8,UniformBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F040isanon-volatilememorythatmaybeerasedelectricallyattheblocklevel,andprogrammedByte-by-Byte. ■M29F040isreplacedbytheM29F040B ■5V±10SUPPLYVOLTAGEforPROGRAM, ERASEandREADOPERATIONS ■FASTACCESSTIME:70ns ■BYTEPROGRAMMINGTIME:1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

GENERALDESCRIPTION TheAm29F040Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0–DQ7.TheAm29F040Bisofferedin32-pinPLC

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

4Megabit(524,288x8-Bit)CMOS5.0Volt-only,SectorEraseFlashMemory

GENERALDESCRIPTION TheAm29F040isa4Mbit,5.0Volt-onlyFlashmemoryorganizedas512Kbytesof8bitseach.TheAm29F040isofferedina32-pinpackage.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0VVPPisnotrequiredforwriteorera

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

GENERALDESCRIPTION TheAm29F040Bisa4Mbit,5.0volt-onlyFlashmemoryorganizedas524,288Kbytesof8bitseach.The512Kbytesofdataaredividedintoeightsectorsof64Kbyteseachforflexibleerasecapability.The8bitsofdataappearonDQ0–DQ7.TheAm29F040Bisofferedin32-pinPLC

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

4Megabit(512Kx8-Bit)CMOS5.0Volt-only,UniformSectorFlashMemory

文件:981.68 Kbytes Page:36 Pages

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

EN29F040A产品属性

  • 类型

    描述

  • 型号

    EN29F040A

  • 制造商

    EON

  • 制造商全称

    Eon Silicon Solution Inc.

  • 功能描述

    4 Megabit(512K x 8-bit) Flash Memory

更新时间:2024-5-24 13:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
21+
TSOP
50000
全新原装正品现货,支持订货
EON
23+
TSSOP-3
8560
受权代理!全新原装现货特价热卖!
EON
23+
PLCC32
8000
全新原装现货,欢迎来电咨询
ertec
dc08+
原厂封装
896
INSTOCK:32/tube/plcc
EON
23+24
PLCC32
53870
原装正品,原盘原标,提供BOM一站式配单
EN
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
EON
DIP32
68500
一级代理 原装正品假一罚十价格优势长期供货
IR
23+
TO220
1001
全新原装现货
EON
2020+
PLCC
210000
100%进口原装正品公司现货库存
23+
N/A
85400
正品授权货源可靠

EN29F040A芯片相关品牌

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  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

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