型号 功能描述 生产厂家 企业 LOGO 操作
EN29F040A-70TI

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

EN29F040A-70TI产品属性

  • 类型

    描述

  • 型号

    EN29F040A-70TI

  • 制造商

    EON

  • 制造商全称

    Eon Silicon Solution Inc.

  • 功能描述

    4 Megabit(512K x 8-bit) Flash Memory

更新时间:2025-10-4 16:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
23+
TSOP48
4200
绝对全新原装!优势供货渠道!特价!请放心订购!
EON
6200
SOP-8
17
100%原装正品现货
EON
24+
PLCC
6000
全新原装正品现货 假一赔佰
EN
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
EON
2447
PLCC
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
EON
24+/25+
3200
原装正品现货库存价优
EON
03+
PLCC
83
一级代理,专注军工、汽车、医疗、工业、新能源、电力
EON
24+
PLCC
8762
公司原厂原装现货假一罚十!特价出售!强势库存!
EON
25+
PLCC
166
百分百原装正品 真实公司现货库存 本公司只做原装 可
EON/宜扬
2450+
PLCC
9850
只做原厂原装正品现货或订货假一赔十!

EN29F040A-70TI数据表相关新闻

  • EN5311QI

    EN5311QI

    2023-12-1
  • EN5322QI

    进口代理

    2023-5-26
  • EN5311QI

    製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx

    2020-10-27
  • EN25QH32B-104HIP

    EN25QH32B-104HIP,全新原装当天发货或门市自取0755-82732291.

    2019-10-26
  • EN25QH16-104HIP

    EN25QH16-104HIP,全新原装当天发货或门市自取0755-82732291.

    2019-10-26
  • EN25Q32C-104HIP

    EN25Q32C-104HIP,全新原装当天发货或门市自取0755-82732291.

    2019-10-26