型号 功能描述 生产厂家 企业 LOGO 操作
EN29F040A-45TC

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

EN29F040A-45TC产品属性

  • 类型

    描述

  • 型号

    EN29F040A-45TC

  • 制造商

    EON

  • 制造商全称

    Eon Silicon Solution Inc.

  • 功能描述

    4 Megabit(512K x 8-bit) Flash Memory

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
24+
NA/
740
优势代理渠道,原装正品,可全系列订货开增值税票
EON
25+
PLCC
2000
原装正品,假一罚十!
EON
25+
PLCC
880000
明嘉莱只做原装正品现货
EONTRON
25+23+
PLCC
7572
绝对原装正品全新进口深圳现货
EON
25+
PLCC
3000
全新原装、诚信经营、公司现货销售
EON
24+
PLCC32
30
EON
2402+
PLCC32
8324
原装正品!实单价优!
EONTRON
24+
PLCC
54000
郑重承诺只做原装进口现货
EON
17+
PLCC
6200
100%原装正品现货
EON
24+
PLCC
9600
原装现货,优势供应,支持实单!

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