型号 功能描述 生产厂家 企业 LOGO 操作
EN29F040A-70TC

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

EN29F040A-70TC产品属性

  • 类型

    描述

  • 型号

    EN29F040A-70TC

  • 制造商

    EON

  • 制造商全称

    Eon Silicon Solution Inc.

  • 功能描述

    4 Megabit(512K x 8-bit) Flash Memory

更新时间:2025-11-23 9:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
25+
TSOP32
52
原装正品,假一罚十!
EON
TSSOP32
125000
一级代理原装正品,价格优势,长期供应!
EON
23+
TSOP32
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
EON
24+
TSSOP-3
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
EON
2402+
TSSOP-32
8324
原装正品!实单价优!
EON
23+
NA
1000
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
EON
23+
TSOP32
33952
##公司主营品牌长期供应100%原装现货可含税提供技术
EON
23+
TSSOP32
6754
全新原装正品现货,支持订货
EON
24+
PLCC
8762
公司原厂原装现货假一罚十!特价出售!强势库存!
EON
6200
SOP-8
17
100%原装正品现货

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