位置：首页 > IC中文资料第6137页 > EN29F040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29F040 | 4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
EN29F040 | 4 Megabit (512K x 8-bit) Flash Memory | EON 宜扬科技 | | |
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | |
EN29F040产品属性
- 类型
描述
- 型号
EN29F040
- 功能描述
4 Megabit(512K x 8-bit) Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL |
1015+ |
PLCC-32 |
5300 |
进口原装特价热卖中,可开17票! |
|||
EON |
24+ |
PLCC |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
EONTRON |
22+ |
PLCC |
12245 |
现货,原厂原装假一罚十! |
|||
EON |
25+ |
TSSOP |
30000 |
代理全新原装现货,价格优势 |
|||
EON |
2450+ |
PLCC |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EON |
03+ |
PLCC/32 |
30 |
原装现货海量库存欢迎咨询 |
|||
EON |
20+ |
PLCC-32 |
368 |
样品可出,原装现货 |
|||
EON |
25+ |
PLCC |
4500 |
原装正品!公司现货!欢迎来电! |
|||
EONTRON |
26+ |
PLCC |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
EONTRON |
25+23+ |
PLCC |
7572 |
绝对原装正品全新进口深圳现货 |
EN29F040规格书下载地址
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- EN25S80
- EN25S64
- EN25S40
- EN25S32
- EN25S20
- EN25S16
- EN25S10
- EN25Q64
- EN25Q40
- EN25Q32
- EN25Q16
- EN25P80
- EN25P64
EN29F040数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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