位置：首页 > IC中文资料第6137页 > EN29F040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29F040 | 4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
EN29F040 | 4 Megabit (512K x 8-bit) Flash Memory | EON 宜扬科技 | | |
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | |
EN29F040产品属性
- 类型
描述
- 型号
EN29F040
- 功能描述
4 Megabit(512K x 8-bit) Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
EON |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EON |
23+ |
NA |
3134 |
专做原装正品,假一罚百! |
|||
NA |
25+ |
原厂原封可拆样 |
54687 |
百分百原装现货 实单必成 |
|||
SYM |
24+ |
NA/ |
3265 |
原装现货,当天可交货,原型号开票 |
|||
EON |
917 |
DIP32 |
130 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
EON |
25+ |
PLCC |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
EON |
20+ |
PLCC-32 |
368 |
样品可出,原装现货 |
|||
EOC |
24+ |
PLCC |
8540 |
只做原装正品现货或订货假一赔十! |
|||
EON |
23+ |
DIP32 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
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- EN2999C
- EN2981C
- EN2855
- EN2828
- EN2817C
- EN2797B
- EN25T80
- EN25S80
- EN25S64
- EN25S40
- EN25S32
- EN25S20
- EN25S16
- EN25S10
- EN25Q64
- EN25Q40
- EN25Q32
- EN25Q16
- EN25P80
- EN25P64
EN29F040数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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