位置：首页 > IC中文资料第6137页 > EN29F040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29F040 | 4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
EN29F040 | 4 Megabit (512K x 8-bit) Flash Memory | EON 宜扬科技 | | |
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory [EON] GENERAL DESCRIPTION The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | | ||
4 Megabit (512K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur | EON 宜扬科技 | |
EN29F040产品属性
- 类型
描述
- 型号
EN29F040
- 功能描述
4 Megabit(512K x 8-bit) Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
2023+ |
PLCC |
5800 |
进口原装,现货热卖 |
|||
EON |
23+ |
TSOP32 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
EON |
0028+ |
PLCC32 |
500 |
原装现货 |
|||
EONTRON |
22+ |
PLCC |
12245 |
现货,原厂原装假一罚十! |
|||
INTEL |
24+ |
PLCC-32 |
6980 |
原装现货,可开13%税票 |
|||
ESS |
24+ |
PLCC |
9600 |
原装现货,优势供应,支持实单! |
|||
EON |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EON |
25+ |
PLCC |
4500 |
原装正品!公司现货!欢迎来电! |
|||
EON |
2025+ |
PLCC |
800 |
原装进口价格优 请找坤融电子! |
|||
EON |
2016+ |
PLCC32 |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
EN29F040芯片相关品牌
EN29F040规格书下载地址
EN29F040参数引脚图相关
- FPC连接器
- fp6290
- foxconn
- fml22s
- flotherm
- finder继电器
- fc114
- fangtek
- f83
- f411
- f4031
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EN3947F
- EN3906A
- EN3814
- EN3582A
- EN3578A
- EN3559
- EN3515C
- EN3416A
- EN3309D
- EN3240C
- EN3235A
- EN3096A
- EN3094B
- EN3093A
- EN3089C
- EN3088C
- EN3056
- EN3026B
- EN3025A
- EN300
- EN29F040-90JI
- EN29F040-90J
- EN29F040-70TI
- EN29F040-70T
- EN29F040-70PI
- EN29F040-70P
- EN29F040-70JI
- EN29F040-70J
- EN29F040-55TI
- EN29F040-55T
- EN29F040-55PI
- EN29F040-55P
- EN29F040-55JI
- EN29F040-55J
- EN29F040-45TI
- EN29F040-45T
- EN29F040-45PI
- EN29F040-45P
- EN29F040-45JI
- EN29F040-45J
- EN29F010-90TIP
- EN29F010-90TCP
- EN29F010-90SIP
- EN29F010-90SCP
- EN29F010-90PIP
- EN29F010-90PCP
- EN29F010-90JIP
- EN29F010-90JCP
- EN29F010-70TIP
- EN29F010-70TCP
- EN29F010-70SIP
- EN29F010-70SCP
- EN29F010-70PIP
- EN29F010-70PCP
- EN29F010-70JIP
- EN29F010-70JCP
- EN29F010-55TIP
- EN29F010-55TCP
- EN29F010-55SIP
- EN29F010-55SCP
- EN2999C
- EN2981C
- EN2855
- EN2828
- EN2817C
- EN2797B
- EN25T80
- EN25S80
- EN25S64
- EN25S40
- EN25S32
- EN25S20
- EN25S16
- EN25S10
- EN25Q64
- EN25Q40
- EN25Q32
- EN25Q16
- EN25P80
- EN25P64
EN29F040数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
