N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 80mΩ ID 2.5A Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

MOSFET

DESCRIPTION The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . GENERAL FEATURES �VDS = 30 V, ID = 80 A RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

丝印代码：M80N03Z；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM80N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

N-Channel 30-V (D-S) MOSFET

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Fast Switching Characteristic

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