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型号 功能描述 生产厂家 企业 LOGO 操作
EMB60N06A

N-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives

VBSEMI

微碧半导体

EMB60N06A

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

EMB60N06A

Power MOSFETs-N Channel

EXCELLIANCE

杰力科技

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

MOTOROLA

摩托罗拉

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

MOTOROLA

摩托罗拉

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

MOTOROLA

摩托罗拉

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is su

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

PHILIPS

飞利浦

EMB60N06A产品属性

  • 类型

    描述

  • Channel:

    Single N

  • BVDSS(V):

    60

  • VGS(±V):

    20

  • ID(A):

    12

  • RDS(ON)(10V) Max.(mΩ):

    60

  • RDS(ON)(5V) Max.(mΩ):

    75

  • RDS(ON)(4.5V) Max.(mΩ):

     

  • RDS(ON)(2.5V) Max.(mΩ):

     

  • Qg(10V)Typ.(nC):

    13.8

  • CissTyp.(pF):

    633

更新时间:2026-5-22 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EMC
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VB
2026+
TO-252
10000
原装正品 假一罚十!
EMC/杰力
2511
TO252-2
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
EMC/杰力
25+
TO-252
50000
全新原装正品支持含税
EMC
24+
TO-252
5568
恒科翔业代理原装现货支持商城下单
EMC
2517+
TO-252
8850
只做原装正品现货或订货假一赔十!
EMC
22+
TO252
20000
公司只有原装 品质保证
BYCHIP
24+
TO-252
200000
优质供应商,支持样品配送。原装诚信
EMC
25+23+
TO-252
52306
绝对原装正品现货,全新深圳原装进口现货
EMB
新年份
TO-252
33288
原装正品现货,实单带TP来谈!

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