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EMB09N03V

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 9mΩ ID 20A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

EMB09N03V

Power MOSFETs-N Channel

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 9.5mΩ ID 10A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

EXCELLIANCE

杰力科技

丝印代码:09N03LA;OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

丝印代码:09N03LA;OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

INFINEON

英飞凌

EMB09N03V产品属性

  • 类型

    描述

  • Channel:

    Single N

  • BVDSS(V):

    30

  • VGS(±V):

    20

  • ID(A):

    20

  • RDS(ON)(10V) Max.(mΩ):

    9

  • RDS(ON)(5V) Max.(mΩ):

     

  • RDS(ON)(4.5V) Max.(mΩ):

    13.5

  • RDS(ON)(2.5V) Max.(mΩ):

     

  • Qg(10V)Typ.(nC):

    17.6

  • CissTyp.(pF):

    828

更新时间:2026-7-23 22:30:00
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