8 PIN DIP WIDE BODY HIGH SPEED

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8 PIN DIP WIDE BODY HIGH SPEED 10MBit/s LOGIC GATE PHOTOCOUPLER

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High Speed Photocoupler

High Speed - 8Pin Wide Body

·高速传输速率1Mbit/ s\n·输入和输出之间的隔离电压 \n·保证性能从0°C至70°C \n·-55°C至100°C工作温度范围 \n·符合无铅和RoHS和无卤素;

8 PIN DIP WIDE BODY HIGH SPEED 10MBit/s LOGIC GATE PHOTOCOUPLER

文件：715.22 Kbytes Page：14 Pages

8 PIN DIP WIDE BODY HIGH SPEED

文件：577.29 Kbytes Page：14 Pages

8 PIN DIP WIDE BODY HIGH SPEED

文件：577.29 Kbytes Page：14 Pages

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the