4G 模组

EG800G 系列是移远通信最新推出的 LTE Cat 1 (bis) 无线通信模块，支持最大下行速率 10 Mbps 和最大上行速率5 Mbps，具有超高性价比。同时在封装上兼容移远通信 LTE Standard EC800E-CN、EC800G-CN、EC800M-CN、EC800N-CN 以及 EG800Q 系列等模块，满足不同行业应用的要求。\n\nEG800G 系列满足中国、印度、EMEA、澳大利亚、新西兰和拉丁美洲等不同地区的频段覆盖。EG800G 系列依托现有 4G 网络，可实现良好的网络覆盖，具有超低功耗、低延迟和良好的移动性等特性。EG800G 系列采用镭雕工艺，镭雕工艺具有 专为M2M 和IoT 应用而设计的LTE Cat 1 (bis) 无线通信模块\n\nLTE 网络的全面覆盖\n\n功能接口丰富\n\nEG800G-CN 支持 GNSS 功能\n\n支持 Wi-Fi Scan\n\n支持 DFOTA\n\n超高性价比;

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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