带SD功能单通道驱动芯片

EG3001 是一款单通道高性价比的功率 MOSFET 管或大功率双极性晶体管门极或基极驱动专用芯片，内部集成了输入逻辑信号处理电路、SD 快速关断处理电路及大电流输出驱动电路，专用于电源转换器及电机控制器等的功率 MOSFET 管驱动器。电源电压范围宽 3V - 30V，静态功耗低仅 2mA，输出结构具有独立的源出电流 OUTD 端和吸入电流 OUTS 端引脚，可用来独立地调节输入到 MOSFET 管 G 极的上升沿时间和下降沿时间。 • 源出峰值驱动电流达 1A 和吸入峰值驱动电流达 1.2A\n• 宽电压输入范围 + 3V - +30V\n• 输入端 IN 可承受最高为 + 30V 的输入电压\n• 低输入供电电流（逻辑 1 输入 - 200uA 典型值，逻辑 0 输入 - 0uA 典型值）\n• 独立的拉电流和灌电流输出结构可独立调节上升沿和下降沿时间\n• SD 引脚实现逐周关断控制，可用于短路或过流保护处理电路\n• 封装形式：SOP - 8;

Single channel power MOSFET drive chip

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DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

Light Emitting Diode Miniature, Diffused Red

Description: The NTE3001 is a diffused Gallium Arsenide Phosphide diode mounted in a two lead epoxy package with a red diffused lens. On forward bias, this device emits a spectrally narrow band of visible light which peaks at 660nm. The NTE3001 is intended for high volume indicator light app

SDH/SONET STM4/OC12 laser drivers

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