Aluminum Electrolytic Capacitors

Surface Mount Type Series: FK Type: V FK High temperature Lead-Free reflow(suffi x:A✽) ■Features ● Endurance: 2000 h at 105 °C ● Low impedance (40 to 60 less than FC series) Miniaturized (30 to 50 less than FC series) ● Vibration-proof product is available upon request. (φ

Aluminum Electrolytic Capacitors/ FK

Surface Mount Type Series: FK Type: V ■ Features ● Endurance: 2000 h to 5000 h at 105 °C ● Low impedance (40 to 60 less than FC series) Miniaturized (30 to 50 less than FC series) ● Vibration-proof product is available upon request. (ø8 mm and larger) ● AEC-Q200 qualified✽ ● RoHS di

Aluminum Electrolytic Capacitors/ FK

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Aluminum Electrolytic Capacitors/ FK

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Aluminum Electrolytic Capacitors/ FK

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Aluminum Electrolytic Capacitors/ FK

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Aluminum Electrolytic Capacitors/ FK

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Aluminum Electrolytic Capacitors/ FK

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nullAluminum Electrolytic Capacitors Medium-size FK

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Aluminum Electrolytic Capacitors

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Aluminum Electrolytic Capacitors/Medium-size FK

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铝电解电容器(表面贴装型)

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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