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型号	功能描述	生产厂家企业	LOGO
EDI8L32512C	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512C12AC	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512C15AC	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512C15AI	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512C17AC	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512C17AI	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512C20AC	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512C20AI	512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me	WEDC	WEDC
EDI8L32512V	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512V12AC	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512V15AC	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512V15AI	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512V17AC	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512V17AI	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512V20AC	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512V20AI	512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062	WEDC	WEDC
EDI8L32512C12AC	12ns; 5V power supply; 512K x 32 CMOS high speed static RAM	WEDC	WEDC
EDI8L32512V	512Kx32 SRAM Module.3.3V	Microchip 微芯科技	Microchip
EDI8L32512V12AC	12ns; 3.3V power supply; 512K x 32 SRAM module	WEDC	WEDC

EDI8L32512产品属性

类型
描述
型号
EDI8L32512
制造商
Microsemi Corporation
功能描述
EDI8L32512C12AI - Bulk

EDI8L32512供应商更多...

更新时间：2025-12-30 18:37:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	EDI8M8128C-120PC	EDI	24+/25+		24	原装正品现货库存价优	询价
标准国际(香港)有限公司	EDI8M1665C35C9C	EDI8M1665C35C9C	25+	3	3		询价
深圳市云美电子科技有限公司	EDI8L32512V20AI	WEDC	24+	PLCC	35000	只做全新原装进口现货	询价
深圳市赛尔通科技有限公司	EDI8M32256C55C6B	EDI	23+		2084		询价
深圳市赛特兴科技有限公司	EDI8M1664C100CB	EDI	QQ咨询	LCC	107	全新原装研究所指定供货商	询价
深圳市能元时代电子有限公司	EDI8L3265C15AC	EDI	23+	PLCC68	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市英卓尔科技有限公司	EDI8L32512V20AI	EDI	20+	QFP	500	样品可出,优势库存欢迎实单	询价
上海金庆电子技术有限公司	EDI8M8257C85P2C	EDI	新		13	全新原装货期两周	询价
天津市博通航睿技术有限公司	EDI8L32512V20AI	EDI	1044		7	优势货源原装正品	询价
深圳市创新迹电子有限公司	EDI8L32512V20AC	EDI	22+	PLCC68	20000	公司只有原装品质保证	询价

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EDI8L32512规格书下载地址

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EDI8L32512数据表相关新闻

EDU36311A/OEM/903
EDU36311A/OEM/903
2022-12-1
ECS-RTC-3225-5699C3 低功耗I2C RTC
ECS 具有内部 TCXO 的 I2C RTC 具有温度传感器和温度补偿电路，可确保时钟精度
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EDZVT2R3.0B：ROHM，SOD-52380K原装现货
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EDI8L32512产品属性

EDI8L32512供应商更多...

EDI8L32512芯片相关品牌

EDI8L32512规格书下载地址

EDI8L32512参数引脚图相关

EDI8L32512数据表相关新闻

EDU36311A/OEM/903

ECS-RTC-3225-5699C3 低功耗I2C RTC

EDS102SZ

EDZVT2R3.0B：ROHM，SOD-52380K原装现货

EDC和EDS系列纽扣电池超级电容器EDC155Z5R5H

EDF8164A3MA-CD-F-R有货的

DdatasheetPDF页码索引