型号 功能描述 生产厂家 企业 LOGO 操作

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

512Kx32 SRAM Module.3.3V

DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062

WEDC

12ns; 5V power supply; 512K x 32 CMOS high speed static RAM

WEDC

512Kx32 SRAM Module.3.3V

MICROCHIP

微芯科技

12ns; 3.3V power supply; 512K x 32 SRAM module

WEDC

EDI8L32512产品属性

  • 类型

    描述

  • 型号

    EDI8L32512

  • 制造商

    Microsemi Corporation

  • 功能描述

    EDI8L32512C12AI - Bulk

更新时间:2026-3-16 0:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EDI
20+
QFP
500
样品可出,优势库存欢迎实单
原厂
2540+
6852
只做原装正品假一赔十为客户做到零风险!!
EDI8M1665C35C9C
25+
3
3
EDI
22+
PLCC68
20000
公司只有原装 品质保证
EDI
1044
7
优势货源原装正品
IDT
CDIP
3647
莱克讯每片来自原厂!价格超越代理!只做进口原装!
EDI
24+
200
进口原装正品优势供应
EDI
23+
2084
EDI
23+
PLCC68
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
EDI
9646+
PLCC68
110
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