位置：首页 > IC中文资料第259页 > EDI8L32512C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EDI8L32512C | 512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC |   | |
EDI8L32512C | 512K X 32 CMOS HIGH SPEED STATIC RAM | WEDC | | |
512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC | | ||
512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC | | ||
512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC | | ||
512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC | | ||
512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC | | ||
512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC | | ||
512Kx32 CMOS High Speed Static RAM DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me | WEDC | | ||
12ns; 5V power supply; 512K x 32 CMOS high speed static RAM | WEDC | | ||
512Kx32 SRAM Module.3.3V DESCRIPTION The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. FEATURES ■ DSP Memory Solution ■ ADSP-21060L (SHARC) ■ ADSP-21062 | WEDC | |
EDI8L32512C产品属性
- 类型
描述
- 型号
EDI8L32512C
- 制造商
Microsemi Corporation
- 功能描述
EDI8L32512C12AI - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WEDC |
24+ |
PLCC |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
WEDC |
24+ |
PLCC |
5000 |
全新原装正品,现货销售 |
|||
WEDC |
25+ |
PLCC |
8000 |
只有原装 |
|||
IDT |
CDIP |
3647 |
莱克讯每片来自原厂!价格超越代理!只做进口原装! |
||||
WEDC |
22+ |
PLCC |
12245 |
现货,原厂原装假一罚十! |
|||
WEDC |
2026+ |
NA |
51 |
原装正品,假一罚十! |
|||
WEDC |
24+ |
NA |
200 |
进口原装正品优势供应 |
|||
WEDC |
25+ |
PLCC |
30000 |
代理全新原装现货,价格优势 |
|||
WEDC |
23+ |
PLCC |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
WEDC |
13+ |
PLCC |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
EDI8L32512C规格书下载地址
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DdatasheetPDF页码索引
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