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型号 功能描述 生产厂家 企业 LOGO 操作
ECR02N60

MOSFET

E-CMOS

飞虹高科

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

INFINEON

英飞凌

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

SIEMENS

西门子

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件:397.15 Kbytes Page:13 Pages

INFINEON

英飞凌

N CHANNEL ENHANCEMENT MODE

文件:701.78 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

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ECR02N60产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    600

  • V GS(V):

    ±30

  • V th (V):

    2/2.5/4.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    3900/4400

  • Ciss(pF):

    280

  • Coss (pF):

    37

  • Crss(pF):

    8

  • Qg (nC)=10V:

    9.4

  • Qgs(nC):

    2.3

  • Qgd(nC):

    4.2

  • Rg W:

    4

  • EAS(mJ):

    50

  • I D(A) Tc=25 ℃:

    2

  • I D(A) Tc=100 ℃:

    1.3

  • EC(W)Tc=25 ℃:

    52

  • ESDDiode:

    X

  • SchokktyDiode:

    X

更新时间:2026-5-24 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ELECTRONIC CONCEPTS (ECI)
23+
SMD
880000
明嘉莱只做原装正品现货
E-CMOS
24+
SOT23-5
5000
全新原装正品,现货销售
E-CMOS
25+
SOT23-5
8000
只有原装
23+
3910
ECI
104
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITANO
23+
10X16
66800
原装进口电解价格优势
PANASONIC/松下
2022+
SMD
78000
原厂代理 终端免费提供样品
E-COMS
23+
SOT23-5
50000
只做原装正品
E-CMOS
23+
SOT23-5
42000
原厂授权一级代理,专业海外优势订货,价格优势、品种
E-CMOS
23+
SOT23-5
50000
全新原装正品现货,支持订货

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