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ECP3904

MOSFET

E-CMOS

飞虹高科

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Aut

ONSEMI

安森美半导体

General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

ONSEMI

安森美半导体

NPN switching transistor

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: MPS3906. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification.

PHILIPS

飞利浦

General Purpose Transistor

General Purpose Transistor NPN Silicon

MOTOROLA

摩托罗拉

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching.

PHILIPS

飞利浦

ECP3904产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFETTyEC:

    N

  • V DS(V):

    30

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.6/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    3.1/4

  • GS =4.5V:

    5.1/6

  • Ciss(pF):

    2200

  • Coss (pF):

    280

  • Crss(pF):

    177

  • Qg (nC)=4.5V:

    24

  • Qgs(nC):

    4.2

  • Qgd (nC):

    13

  • Rg W:

    2

  • EAS mJ):

    125

  • I D(A) Tc=25 ℃:

    140

  • I D(A) Tc=100 ℃:

    89

  • EC(W)Tc=25 ℃:

    125

  • ESDDiode:

    X

  • Schokkty Diode:

    X

ECP3904数据表相关新闻