位置:首页 > IC中文资料 > ECD04N60

型号 功能描述 生产厂家 企业 LOGO 操作
ECD04N60

MOSFET

E-CMOS

飞虹高科

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

INFINEON

英飞凌

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

INFINEON

英飞凌

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications

INFINEON

英飞凌

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications

INFINEON

英飞凌

POWER MOSFET

文件:329.86 Kbytes Page:7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ECD04N60产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    600

  • V GS(V):

    ±30

  • V th (V):

    3/4/5

  • R DS(ON)(mΩ) max. at V GS =10V:

    1850/2200

  • Ciss(pF):

    760

  • Coss (pF):

    54

  • Crss(pF):

    4

  • Qg (nC)=10V:

    16.5

  • Qgs(nC):

    4.5

  • Qgd(nC):

    5.5

  • Rg W:

    2.6

  • EAS(mJ):

    25

  • I D(A) Tc=25 ℃:

    4

  • I D(A) Tc=100 ℃:

    2.5

  • EC(W)Tc=25 ℃:

    50

  • ESDDiode:

    X

  • SchokktyDiode:

    X

更新时间:2026-5-22 21:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CIC
26+
DIP14
20000
公司只有正品,实单来谈
SANYO/三洋
2026+
DIP
62
原装正品 假一罚十!
CIC
26+
DIP14
99680
只做原装,欢迎来电资询
E-COMS
23+
TO252
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
ENGYA
2450+
8540
只做原装正品假一赔十为客户做到零风险!!
IC
24+
DIP
12
SANYO/三洋
24+
DIP
37279
郑重承诺只做原装进口现货
CIC
25+
DIP14
18000
原装正品,全新来谈
CIC
23+
DIP14
98900
原厂原装正品现货!!
TOKO
15+ROHS
SMD
9650
一级质量保证长期稳定提供货优价美

ECD04N60数据表相关新闻