玄铁8系列处理器 基于C-SKY架构

E802采用2级极简流水线，并对平均功耗以及峰值功耗进行优化，同时可选配安全执行环境以增强系统安全性，适用于对功耗和成本极其敏感的IoT、MCU等应用领域 指令集\n• 2级流水线\n• 16个32位GPR\n• 双总线（指令总线 数据总线）\n• 0-8个保护区可选配\n• 中断控制器、计时器\n• 慢速乘法器、快速乘法器可选配\n\n\n\n;

Pérmanent Magnets

文件：859.98 Kbytes Page：8 Pages

Eaton’s Moulded Accessory Range (EMA)

文件：1.11441 Mbytes Page：8 Pages

包装：盒 描述：ALNICO POCKET HORSESHOE 28.5X7.6 传感器，变送器 磁体 - 多用途

Industrial passive junction, eightfold fully encapsulated

文件：110.51 Kbytes Page：1 Pages

INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

文件：100.08 Kbytes Page：6 Pages

TRANSISTOR MODULES MEDIUM POWER SWITCHING USE

文件：79.38 Kbytes Page：5 Pages

INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

文件：100.08 Kbytes Page：6 Pages

TRANSISTOR MODULES MEDIUM POWER SWITCHING USE

文件：79.38 Kbytes Page：5 Pages

TRANSISTOR MODULES MEDIUM POWER SWITCHING USE

文件：79.38 Kbytes Page：5 Pages

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat