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型号 功能描述 生产厂家 企业 LOGO 操作
DTU4N60

Power MOSFET Reduced Gate Drive Requirement

文件:2.10134 Mbytes Page:11 Pages

DINTEK

尚鼎芯

DTU4N60

Reduced Gate Drive Requirement

文件:249.46 Kbytes Page:8 Pages

DINTEK

尚鼎芯

DTU4N60

N-Channel MOSFET uses advanced trench technology

文件:1.5618 Mbytes Page:5 Pages

DOINGTER

杜因特

DTU4N60

N Channel MOSFET

TEK

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

更新时间:2026-3-17 20:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DAYSEMI
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
DIN-TEK
2026+
TO-252
1350
原装正品,假一罚十!
DINGDAY
25+
TO252
15000
全新原装现货,价格优势
DAYSEMI
TO-252
35500
一级代理 原装正品假一罚十价格优势长期供货
DIN-TEK
23+
25265
全新 发货1-2天
DIN-TEK
23+
TO-252
79999
原厂授权一级代理,专业海外优势订货,价格优势、品种
DIN-TEK
20+
TO-252
32500
现货很近!原厂很远!只做原装
DAYSEMI
22+
TO-252
20000
只做原装
DINGDAY
24+
sot-252
65200
一级代理/放心采购
DIN-TEK
2022+
TO-252
32500
原厂代理 终端免费提供样品

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