LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -20V • IC = -2A Continuous Collector Current • ICM = -4A Peak Pulse Current • Low Saturation Voltage VCE(sat)

PNP, 20V, 2A, SOT23

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -20V • IC = -2A Continuous Collector Current • ICM = -4A Peak Pulse Current • Low Saturation Voltage VCE(sat)

20V PNP LOW SATURATION TRANSISTOR IN SOT23

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SWITCHMODE??Power Dual Schottky Rectifier

SWITCHMODE Power Dual Schottky Rectifier ...using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Sch

20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky

20 Amp High Voltage 200Volts Barrier Rectifier PowerSchottky Features • High Junction Temperature Capability x Marking : type number • Low Leakage Current • Case Material: Molded Plastic. UL Flammability ClassificationRating94V-0and MSL Rating 1 • Lead Free Finish/RoHS Com

SWIRCHMODE?? Power Dual Schottky Rectifier

. . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs. They block up to 200 volts and offer improved Schottky performance at frequencies from 250 k

SWITCHMODE??Schottky Power Rectifirer

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

20 Amp High Voltage 200Volts Barrier Rectifier Power Schottky

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