3.3V and 5.0V MicroMonitor

DESCRIPTION The DS1705/DS1706 3.3- or 5.0-Volt MicroMonitor monitors three vital conditions for a microprocessor: power supply, software execution, and external override. A precision temperature compensated reference and comparator circuit monitor the status of VCC at the device and at an upstre

3.3V and 5.0V MicroMonitor

DESCRIPTION The DS1705/DS1706 3.3- or 5.0-Volt MicroMonitor monitors three vital conditions for a microprocessor: power supply, software execution, and external override. A precision temperature compensated reference and comparator circuit monitor the status of VCC at the device and at an upstre

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：管件 描述：IC SUPERVISOR 1 CHANNEL 8UMAX 集成电路（IC） 监控器

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：带 描述：IC MICROMONITOR 5V 5% 8-USOP 集成电路（IC） 监控器

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Super Low on-resistance RDS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V