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DS1345价格

参考价格：￥115.7162

型号：DS1345ABP-70+ 品牌：Maxim 备注：这里有DS1345多少钱，2025年最近7天走势，今日出价，今日竞价，DS1345批发/采购报价，DS1345行情走势销售排行榜，DS1345报价。

型号	功能描述	生产厂家企业	LOGO
DS1345AB	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345AB-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	Dallas	Dallas
DS1345AB-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	Dallas	Dallas
DS1345ABA-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABA-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABA-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABA-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABP-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	Dallas	Dallas
DS1345ABP-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	Dallas	Dallas
DS1345BL	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c	Dallas	Dallas
DS1345BL-100	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c	Dallas	Dallas
DS1345BL-100-IND	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c	Dallas	Dallas
DS1345BL-70	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c	Dallas	Dallas
DS1345BL-70-IND	1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c	Dallas	Dallas
DS1345W	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a	Dallas	Dallas
DS1345WP-100	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a	Dallas	Dallas
DS1345WP-100-IND	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a	Dallas	Dallas
DS1345WP-150	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a	Dallas	Dallas
DS1345WP-150-IND	3.3V 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a	Dallas	Dallas
DS1345Y	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	Dallas	Dallas
DS1345Y	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345Y-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	Dallas	Dallas
DS1345YA-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YA-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YA-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YA-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YB-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YB-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YB-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YB-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YC-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YC-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YC-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YC-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YD-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345YD-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim

DS1345产品属性

类型
描述
型号
DS1345
制造商
MAXIM
制造商全称
Maxim Integrated Products
功能描述
1024k Nonvolatile SRAM with Battery Monitor

DS1345供应商更多...

更新时间：2025-12-16 17:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市振宏微科技有限公司	DS1345ABP-70IND+	MAXIM	23+	PWRCP	8888	专做原装正品,假一罚百!	询价
深圳市昌和盛利电子有限公司	DS1345W-120	DALLAS	NEW	DIP	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市恒达亿科技有限公司	DS1345W-100	DALLAS	25+	DIP	3200	全新原装、诚信经营、公司现货销售	询价
深圳市宝芯创电子有限公司	DS1345WP-100	DALLAS	18+	34-PCM	27320	全新原装现货,可出样品,可开增值税发票	询价
深圳市一线半导体有限公司	DS1345W-100	DALLAS	24+		20000		询价
深圳市福田区绿盛电子商行	DS1345W-100/120	DAL	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市宏捷佳电子科技有限公司	DS1345BL-100	Analog Devices Inc./Maxim Inte	25+	34-LPM	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市星佑电子有限公司	DS1345BL-070	DALLAS	05+	模块/34	2	自己公司全新库存绝对有货	询价
深圳市能元时代电子有限公司	DS1345WP-100	DALLAS	23+		40118	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市河锋鑫科技有限公司	DS1345BL100	Maxim	22+	34LPM	9000	原厂渠道,现货配单	询价

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DS1345规格书下载地址

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