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DS1345AB价格

参考价格：￥115.7162

型号：DS1345ABP-70+ 品牌：Maxim 备注：这里有DS1345AB多少钱，2025年最近7天走势，今日出价，今日竞价，DS1345AB批发/采购报价，DS1345AB行情走势销售排行榜，DS1345AB报价。

型号	功能描述	生产厂家&企业	LOGO
DS1345AB	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345AB-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	DallasDallas Semiconductor 亚德诺亚德诺半导体	Dallas
DS1345AB-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	DallasDallas Semiconductor 亚德诺亚德诺半导体	Dallas
DS1345ABA-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABA-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABA-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABA-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABB-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABC-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABD-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABE-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABF-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-100	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-70	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABG-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li	Maxim 美信	Maxim
DS1345ABP-100-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	DallasDallas Semiconductor 亚德诺亚德诺半导体	Dallas
DS1345ABP-70-IND	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit	DallasDallas Semiconductor 亚德诺亚德诺半导体	Dallas
DS1345ABP-70	封装/外壳：34-PowerCap™ 模块包装：管件描述：IC NVSRAM 1MBIT PAR 34PWRCAP 集成电路（IC）存储器	AD 亚德诺	AD
DS1345ABP-70+	1024k Nonvolatile SRAM with Battery Monitor 文件：193.36 Kbytes Page：10 Pages	Maxim 美信	Maxim
DS1345ABP-70+	封装/外壳：34-PowerCap™ 模块包装：管件描述：IC NVSRAM 1MBIT PAR 34PWRCAP 集成电路（IC）存储器	AD 亚德诺	AD
DS1345ABP-70IND+	1024k Nonvolatile SRAM with Battery Monitor 文件：193.36 Kbytes Page：10 Pages	Maxim 美信	Maxim
1345	1345-Type Receiver with Clock Recovery and Data Retiming Description The 1345-Type fiber-optic receiver is designed for use in transmission systems or medium- to high speed data communication applications. Used in intermediate- and long-reach applications, the receiver operates at the SONET OC-3 or OC-12 data rate as well as the ITU-T synchronous dig	agere	agere
1345CAPC	1345-Type Receiver with Clock Recovery and Data Retiming Description The 1345-Type fiber-optic receiver is designed for use in transmission systems or medium- to high speed data communication applications. Used in intermediate- and long-reach applications, the receiver operates at the SONET OC-3 or OC-12 data rate as well as the ITU-T synchronous dig	agere	agere
1345CBPC	1345-Type Receiver with Clock Recovery and Data Retiming Description The 1345-Type fiber-optic receiver is designed for use in transmission systems or medium- to high speed data communication applications. Used in intermediate- and long-reach applications, the receiver operates at the SONET OC-3 or OC-12 data rate as well as the ITU-T synchronous dig	agere	agere
1345	Strain Relief Mounting Hole Punches 文件：130.259 Kbytes Page：1 Pages	HeycoHeyco. 海科	Heyco
1345	3M??EMI/EMC Electronic Materials 文件：4.87064 Mbytes Page：12 Pages	3M	3M

DS1345AB产品属性

类型
描述
型号
DS1345AB
制造商
MAXIM
制造商全称
Maxim Integrated Products
功能描述
1024k Nonvolatile SRAM with Battery Monitor

DS1345AB供应商更多...

更新时间：2025-8-18 13:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	DS1345ABP-70	DALLAS	2402+	34pwrcap	8324	原装正品!实单价优!	询价
深圳市赛尔通科技有限公司	DS1345ABP-70	DALLAS	23+	PWRCP	65480		询价
上海凌岳电子科技有限公司（上海涵恩科技）	DS1345ABP-70		2023+		3000	进口原装现货	询价
深圳市星佑电子有限公司	DS1345ABP-70	DALLAS	05+	34/pwrcap	210	自己公司全新库存绝对有货	询价
深圳市佳鑫美电子科技有限公司	DS1345ABP-70	DALLAS	24+	34-PCM	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市宇创芯科技有限公司	DS1345ABP-70	DALLAS	24+	34-PCM	9600	原装现货,优势供应,支持实单!	询价
现代芯城（深圳）科技有限公司	DS1345ABP-70IND		24+	N/A	76000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市安富世纪电子有限公司	DS1345ABP-70IND	Maxim Integrated	23+	34-PowerCap 模块	7300	专注配单,只做原装进口现货	询价
艾睿（深圳）半导体有限公司	DS1345ABP-70	DALLAS	2447	34-PCM	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市能元时代电子有限公司	DS1345ABP-70	DALLAS	23+		45866	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

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DS1345AB价格

DS1345AB产品属性

DS1345AB供应商更多...

DS1345AB芯片相关品牌

DS1345AB规格书下载地址

DS1345AB参数引脚图相关

DS1345AB数据表相关新闻

DS160PR412RUAT

DS1340Z-33T&R MAXIM/美信 21+ SOP8

DS1339U-33+T&R 假一罚十

DS1391U-33+

DS1388Z-33+T&R 焕盛达 原装现货

DS1340Z-33+TR实时时钟原装热卖

DdatasheetPDF页码索引

DS1388Z-33+T&R 焕盛达原装现货