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DS1345Y价格
参考价格：￥115.8618
型号：DS1345YP-100+ 品牌：Maxim 备注：这里有DS1345Y多少钱，2024年最近7天走势，今日出价，今日竞价，DS1345Y批发/采购报价，DS1345Y行情走势销售排行榜，DS1345Y报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1345Y | 1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. |  |   |
DS1345Y | 1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 |  | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024KNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024KNonvolatileSRAMsare1,048,576–bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchac | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024KNonvolatileSRAMsare1,048,576–bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchac | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024KNonvolatileSRAMsare1,048,576–bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchac | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024KNonvolatileSRAMsare1,048,576–bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchac | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAMwithBatteryMonitor 文件：193.36 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024KNonvolatileSRAMwithBatteryMonitor 文件：387.94 Kbytes Page：9 Pages | MaximMaximIntegrated 美信半导体 | | | |
封装/外壳：34-LPM 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 34LPM 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
封装/外壳：34-LPM 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 34LPM 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
1024kNonvolatileSRAMwithBatteryMonitor 文件：193.36 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor 文件：193.36 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 |  | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 | | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 | | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 | | | |
3M??EMI/EMCElectronicMaterials 文件：4.87064 Mbytes Page：12 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  | |
DS1345Y产品属性
- 类型
描述
- 型号
DS1345Y
- 制造商
MAXIM
- 制造商全称
Maxim Integrated Products
- 功能描述
1024k Nonvolatile SRAM with Battery Monitor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAXIM/美信 |
2021+ |
PowerCap Module-34 |
6900 |
||||
MAXIM |
21+ |
PowerCap Module-34 |
6000 |
原装现货 |
|||
MAXIM(美信) |
23+ |
6000 |
|||||
MAXIM/美信 |
23+ |
PwrCap |
9980 |
原装正品，支持实单 |
|||
MAXIM/美信 |
23+ |
SSOPQFN |
25050 |
原厂支持公司优势现货 |
|||
23+ |
N/A |
90550 |
正品授权货源可靠 |
||||
MAXIM/美信 |
2023+ |
PowerCap Module-34 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
DALLAS |
23+ |
DIP-8 |
5000 |
原装正品,假一罚十 |
|||
MAXIM |
22+ |
SOP34 |
5520 |
绝对原装现货,价格低,欢迎询购! |
|||
DALLAS |
21+ROHS |
DIP |
30665 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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DS1345Y规格书下载地址
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2019-11-6
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