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DS1345Y价格
参考价格：￥115.8618
型号：DS1345YP-100+ 品牌：Maxim 备注：这里有DS1345Y多少钱，2025年最近7天走势，今日出价，今日竞价，DS1345Y批发/采购报价，DS1345Y行情走势销售排行榜，DS1345Y报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1345Y | 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas |   | |
DS1345Y | 1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | |
DS1345Y | 1024k非易失SRAM，带有电池监测器 | AD 亚德诺 | | |
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li | Maxim 美信 | | ||
1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c | Dallas | | ||
1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c | Dallas | | ||
1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c | Dallas | | ||
1024K Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024K Nonvolatile SRAMs are 1,048,576–bit, fully static, nonvolatile SRAMs organized as 131,072 words by eight bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of– tolerance condition. When such a c | Dallas | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas | | ||
1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condit | Dallas | | ||
1024k Nonvolatile SRAM with Battery Monitor 文件：193.36 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024K Nonvolatile SRAM with Battery Monitor 文件：387.94 Kbytes Page：9 Pages | Maxim 美信 | | ||
封装/外壳：34-LPM 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 34LPM 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：34-LPM 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 34LPM 集成电路（IC） 存储器 | AD 亚德诺 | | ||
1024k Nonvolatile SRAM with Battery Monitor 文件：193.36 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM with Battery Monitor 文件：193.36 Kbytes Page：10 Pages | Maxim 美信 | | ||
TV Microscope - 25x & 400x magnification / 8 LEDs o Image Sensor: 1.3 megapixel w/high-speed DSP o 25x or 400x axis micro-lens o Adjustable focal length, from 10mm-50mm o Video rate of 30f/s at a brightness of 600 lux o Flicker control for 50Hz/60Hz o 8 white LED light, 40000mLux o 5V adapter 5.5mm/2.1mm jack powered o Size: 112mm long x 3 | Adafruit | | ||
1345-Type Receiver with Clock Recovery and Data Retiming Description The 1345-Type fiber-optic receiver is designed for use in transmission systems or medium- to high speed data communication applications. Used in intermediate- and long-reach applications, the receiver operates at the SONET OC-3 or OC-12 data rate as well as the ITU-T synchronous dig | agere | | ||
1345-Type Receiver with Clock Recovery and Data Retiming Description The 1345-Type fiber-optic receiver is designed for use in transmission systems or medium- to high speed data communication applications. Used in intermediate- and long-reach applications, the receiver operates at the SONET OC-3 or OC-12 data rate as well as the ITU-T synchronous dig | agere | | ||
Strain Relief Mounting Hole Punches 文件：130.259 Kbytes Page：1 Pages | Heyco | | ||
3M??EMI/EMC Electronic Materials 文件：4.87064 Mbytes Page：12 Pages | 3M | |
DS1345Y产品属性
- 类型
描述
- 型号
DS1345Y
- 制造商
MAXIM
- 制造商全称
Maxim Integrated Products
- 功能描述
1024k Nonvolatile SRAM with Battery Monitor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI(亚德诺)/MAXIM(美信) |
24+ |
SMD34P |
7350 |
原装进口,原厂直销!当天可交货,支持原型号开票! |
|||
MAXIM/美信 |
24+ |
NA/ |
133 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MAXIM/美信 |
24+ |
SSOPQFN |
25050 |
原厂支持公司优势现货 |
|||
MAXIM |
23+ |
PWRCP |
8888 |
专做原装正品,假一罚百! |
|||
MAXIM/美信 |
24+ |
PowerCap Module-34 |
30000 |
原装正品公司现货,假一赔十! |
|||
DALLAS |
2526+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
|||
DALLAS |
24+ |
NA |
7500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
DALLAS |
18+ |
34-PCM |
27321 |
全新原装现货,可出样品,可开增值税发票 |
|||
DALLAS |
23+ |
PWRCP |
65480 |
||||
MAXIM/美信 |
23+ |
PowerCap Module-34 |
12700 |
买原装认准中赛美 |
DS1345Y规格书下载地址
DS1345Y参数引脚图相关
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- f133
- f1212
- ex128
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- ESD
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- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- DS1388Z-33+T&R
- DS1388Z-33+
- DS1388Z-3+
- DS1385S
- DS1385
- DS1384
- DS138
- DS1375T+
- DS1375
- DS1374U-33+TR
- DS1374U-33+T&R
- DS1374U-33+
- DS1374U-3+T&R
- DS1374U-3+
- DS1374U-18+
- DS1374
- DS1372U+
- DS1372
- DS1371U+
- DS1371U
- DS1371
- DS136
- DS135E
- DS135D
- DS135C
- DS135AC
- DS135A
- DS1351-6R8M-B
- DS1351-1R0M-B
- DS1351
- DS1350Y
- DS1350W
- DS135
- DS1347T+T&R
- DS1347T+
- DS1347
- DS1346
- DS1345YP-70IND+
- DS1345YP-70+
- DS1345YP-100+
- DS1345WP-100IND+
- DS1345WP-100+
- DS1345W
- DS1345ABP-70+
- DS1344E-33+
- DS1344E-3+T&R
- DS1344E-3+
- DS1344E-18+T&R
- DS1344E-18+
- DS1344D-33+T&R
- DS1344D-33+
- DS1344D-3+T&R
- DS1344D-18+T&R
- DS1344D-18+
- DS1344
- DS1343E-33+T&R
- DS1343E-33+
- DS1343E-3+T&R
- DS1343E-3+
- DS1343E-18+T&R
- DS1343E-18+
- DS1343D-33+T&R
- DS1343
- DS1342
- DS1341
- DS1340U
- DS1340
- DS134
- DS1339A
- DS1339
- DS1338
- DS1337U
- DS1337S
- DS1337C
- DS1337+
- DS1337
- DS1336
- DS13320
- DS1330Y
- DS1330W
DS1345Y数据表相关新闻
DS160PR412RUAT
DS160PR412RUAT
2022-6-14DS1340Z-33T&R MAXIM/美信 21+ SOP8
https://hfx03.114ic.com/
2022-2-18DS1339U-33+T&R 假一罚十
专业做一系列IC， 只做原装正品
2020-9-16DS1391U-33+
SOIC-16 实时时钟 , MAX31341 实时时钟 , Through Hole 实时时钟 , I2C 实时时钟 , Backup Switching - 40 C 实时时钟 , DD:HH:MM:SS 实时时钟
2020-7-13DS1388Z-33+T&R 焕盛达 原装现货
原厂很远 现货很近 坚持每一片芯片都来自原厂及授权渠道
2020-6-2DS1340Z-33+TR实时时钟原装热卖
DS1340Z-33+TR全新进口原装正品 假一罚十！价格优惠！欢迎新老客户来电咨询采购！
2019-11-6
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