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DS1230价格

参考价格：￥104.6154

型号：DS1230AB-100+ 品牌：Maxim 备注：这里有DS1230多少钱，2026年最近7天走势，今日出价，今日竞价，DS1230批发/采购报价，DS1230行情走势销售排行榜，DS1230报价。

型号	功能描述	生产厂家企业	LOGO
DS1230AB	256k非易失SRAM DS1230 256k非易失(NV) SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1230器件可以用来替代现有的32k x 8静态RAM，符合通用的单字节宽、28引脚DIP标准。DIP器件还与28256 EEPROM的引脚匹配，可直接替换并增强其性能。小尺寸模块封装的DS1230器件专为表面贴装应用设计。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代32k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS操作\n• 70ns的读写存取时间\n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1230Y)\n• 可选择±5% VCC工作范围(DS1230AB)\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• JEDEC标准的28引脚DIP封装\n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerCap提;	AD 亚德诺	AD
DS1230AB-100	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-100IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-100-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-120	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-120IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-120-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-150	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-150IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-150-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-200	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-200IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-200-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-70	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-70IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-70-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-85	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-85IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-85-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P100	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-100	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P100IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-100-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P120	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-120	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P120IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-120-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P150	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-150	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P150IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-150-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P200	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-200	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P200IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-200-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P70	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-70	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P70IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-70-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P85	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-85	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230AB-P85IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230ABP-85-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230W	3.3V 256k Nonvolatile SRAM DESCRIPTION The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a cond	DALLAS	DALLAS
DS1230W	3.3V、256k非易失SRAM DS1230W 3.3V 256k非易失SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电，写保护将无条件使能、以防数据被破坏。 DIP封装的DS1230W器件可以用来替代现有的32k x 8静态RAM，符合通用的单字节宽、28引脚DIP标准。DIP器件还与28256 EEPROM的引脚匹配，可直接替换并增强其性能。PowerCap模块封装的DS1230W器件可以直接表面贴安装、通常与DS9034PC PowerCap配合构成一个完整的非易失SR • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代32k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS操作 \n• 100ns的读写时间 \n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• JEDEC标准的28引脚DIP封装 \n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerCap提供备份锂电池 \n• 所有非易失SRAM器件提供标准引脚 \n• 分离的PowerCap用常规的螺丝起子便可方便拆卸;	AD 亚德诺	AD
DS1230W-100	3.3V 256k Nonvolatile SRAM DESCRIPTION The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a cond	DALLAS	DALLAS
DS1230W-150	3.3V 256k Nonvolatile SRAM DESCRIPTION The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a cond	DALLAS	DALLAS
DS1230Y	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y	256k非易失SRAM DS1230 256k非易失(NV) SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1230器件可以用来替代现有的32k x 8静态RAM，符合通用的单字节宽、28引脚DIP标准。DIP器件还与28256 EEPROM的引脚匹配，可直接替换并增强其性能。小尺寸模块封装的DS1230器件专为表面贴装应用设计。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代32k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS操作\n• 70ns的读写存取时间\n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1230Y)\n• 可选择±5% VCC工作范围(DS1230AB)\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• JEDEC标准的28引脚DIP封装\n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerCap提;	AD 亚德诺	AD
DS1230Y/AB	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-100	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-100IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-100-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-120	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-120IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-120-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-150	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-150IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-150-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-200	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS

DS1230产品属性

类型
描述
Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.75
VSUPPLY (max)(V)：
5.25
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Budgetary Price (See Notes)：
$14.97 @1k

DS1230供应商更多...

更新时间：2026-8-4 18:42:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
柒号芯城电子商务(深圳)有限公司	DS1230W-100+	MAXIM	2025+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市科恒伟业电子有限公司	DS1230W-150+	MAXIM	24+	DIP-28	8500	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市讯顺达科技有限公司	DS1230W-150+	MAXIM	20+	DIP-28	504	全新原装公司现货	询价
深圳市得捷芯城科技有限公司	DS1230W-150+	Maxim(美信)	25+	N/A	21000	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市冠亿通科技有限公司	DS1230W-150+	Analog Devices Inc./Maxim Inte	24+25+		16500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
洪芯国际半导体（深圳）有限公司	DS1230W-150+	MAXIM/美信	26+	SOP-8	86500	一级代理专营品牌!原装正品,现货为客户做到零风险!!	询价
芯有半导体（深圳）有限公司	DS1230W-150	DALLAS	00+	DIP	2300	全新原装绝对自己公司现货	询价
深圳市坤融电子科技有限公司	DS1230W-150+	MAXIM/美信	2025+	DIP-28	5000	原装进口价格优请找坤融电子!	询价
深圳市高捷芯城科技有限公司	DS1230W-100IND+	Maxim(美信)	24+	标准封装	7348	原厂渠道供应,大量现货,原型号开票。	询价

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DS1085Z-50+ ADI(亚德诺)/MAXIM(美信) SOP8 原装现货
DS1085Z-50+
2023-11-3
DS1230AB-70IND
进口代理
2023-10-27
DS1233AZ-10+
DS1233AZ-10+
2022-9-28
DS1232LP+，美信珠海代理商，MAXIM珠海代理商
DS1232LP+，美信珠海代理商，MAXIM珠海代理商
2020-10-31
DS1225AB200，买电子元器件就找兴中扬，一站式配齐，
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2019-11-30
DS1050-5位，可编程，脉宽调制器-1kHz时，为5kHz，10kHz时，和25KHZ
DS1050是一个可编程的，5位，脉宽调制器采用2线可寻址控制接口。 DS1050经营范围从2.7V至5.5V的电源供应。 PWM输出提供了一个信号，从0V到VCC的波动。 DS1050需要一个典型工作电流为50 A和一个可编程的关断电源电流1 A四个标准的PWM输出频率，并提供包括1kHz时，为5kHz和10kHz和25kHz的。 2线寻址接口允许一个单一的2线总线上的多个设备的操作，并提供兼容性与其他Dallas Semiconductor的2线的设备，如实时时钟（RTC的），数字温度计和数字电位器。该设备是低成本LCD对比度和/或亮度控制，电源电压的理想选择调整，电池充电电流调节。 DS
2012-12-3

DdatasheetPDF页码索引

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DS1230芯片相关品牌

DS1230规格书下载地址

DS1230参数引脚图相关

DS1230数据表相关新闻

DS1085Z-50+ ADI(亚德诺)/MAXIM(美信) SOP8 原装现货

DS1230AB-70IND

DS1233AZ-10+

DS1232LP+，美信珠海代理商，MAXIM珠海代理商

DS1225AB200，买电子元器件就找兴中扬，一站式配齐，

DS1050-5位，可编程，脉宽调制器-1kHz时，为5kHz，10kHz时，和25KHZ

DdatasheetPDF页码索引