型号 功能描述 生产厂家 企业 LOGO 操作
DS1230AB-200IND

256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

DALLAS

DS1230AB-200IND

封装/外壳:28-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 256KBIT PAR 28EDIP 集成电路(IC) 存储器

AD

亚德诺

256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

DALLAS

256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

DALLAS

DS1230AB-200IND产品属性

  • 类型

    描述

  • 型号

    DS1230AB-200IND

  • 功能描述

    NVRAM 256k Nonvolatile SRAM

  • RoHS

  • 制造商

    Maxim Integrated

  • 数据总线宽度

    8 bit

  • 存储容量

    1024 Kbit

  • 组织

    128 K x 8

  • 接口类型

    Parallel

  • 访问时间

    70 ns

  • 电源电压-最大

    5.5 V

  • 电源电压-最小

    4.5 V

  • 工作电流

    85 mA

  • 最大工作温度

    + 70 C

  • 最小工作温度

    0 C

  • 封装/箱体

    EDIP

  • 封装

    Tube

更新时间:2026-3-12 13:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ADI(亚德诺)
25+
28-EDIP
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
DALLAS
24+
DIP
1405
现货特价
DALLAS
24+
DIP
7671
原装正品.优势专营
DALLAS
23+
DIP
50000
全新原装正品现货,支持订货
DALLAS
21+
DIP
36680
只做原装,质量保证
24+
5070
全新原装,价格优势,原厂原包
DALLAS
22+
DIP
12245
现货,原厂原装假一罚十!
DALLAS
2016+
DIP
3000
主营TI,绝对原装,假一赔十,可开17%增值税发票!
DALLAS
23+
DIP
9356
原厂授权一级代理,专业海外优势订货,价格优势、品种
DALLAS
2023+
DIP
50000
原装现货

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