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DS1230AB价格
参考价格：￥104.6154
型号：DS1230AB-100+ 品牌：Maxim 备注：这里有DS1230AB多少钱，2024年最近7天走势，今日出价，今日竞价，DS1230AB批发/采购报价，DS1230AB行情走势销售排行榜，DS1230AB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1230AB | 256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 |  |   |
DS1230AB | 256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | Dallas Dallas Semiconductor Corp. |  | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
CustomerSpecification Construction 1)Conductor a)MaterialTinnedCopper,perASTMB-33andCID-A-A-59551,latestrevision b)StrandingSolid 2)BraidData a)NominalDimensions.1875x.020Inches b)AWGofEnds36 c)NumberofCarriers24 d)NominalPercentCoverageN/A e)TotalNumberofEnds120 f)Appro | ALPHAWIREAlpha Wire 阿尔法电线 |  | | |
VariableRFInductor 文件：325.82 Kbytes Page：2 Pages | YANTELYantel Corporation 研通高频深圳市研通高频技术有限公司 |  | | |
PCBoardMountablePressureSensor 文件：183.22 Kbytes Page：5 Pages | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 |  | | |
Ultra-SensitiveDual-ChannelQuadratureHall-EffectBipolarSwitch 文件：392.5 Kbytes Page：16 Pages | Allegro Allegro MicroSystems |  | | |
Ultra-SensitiveDual-ChannelQuadratureHall-EffectBipolarSwitch 文件：392.5 Kbytes Page：16 Pages | Allegro Allegro MicroSystems | | |
DS1230AB产品属性
- 类型
描述
- 型号
DS1230AB
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
256k Nonvolatile SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLAS |
0920+ |
DIP28 |
289 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DALLAS |
23+ |
DIP |
20000 |
热卖优势现货 |
|||
DS |
23+ |
DIP |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
MAXIM |
21+ |
NA |
7500 |
原装热卖可订货 |
|||
DALLAS |
1948+ |
DIP-28 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
MAXIM/美信 |
2022+ |
EDIP-28 |
6900 |
原厂原装,假一罚十 |
|||
DALLAS |
23+ |
DIP-28 |
8888 |
专做原装正品,假一罚百! |
|||
DALLAS |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
DALLAS |
99+ |
DIP |
1399 |
||||
DALLAS |
22+ |
5000 |
DS1230AB芯片相关品牌
DS1230AB规格书下载地址
DS1230AB参数引脚图相关
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- DS1225AB-170+
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- DS1220AD-200IND+
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- DS1217M
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- DS1217
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- DS1216F
- DS1216E
- DS1216D
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DS1050是一个可编程的，5位，脉宽调制器采用2线可寻址控制接口。DS1050经营范围从2.7V至5.5V的电源供应。PWM输出提供了一个信号，从0V到VCC的波动。DS1050需要一个典型工作电流为50A和一个可编程的关断电源电流1A四个标准的PWM输出频率，并提供包括1kHz时，为5kHz和10kHz和25kHz的。2线寻址接口允许一个单一的2线总线上的多个设备的操作，并提供兼容性与其他DallasSemiconductor的2线的设备，如实时时钟（RTC的），数字温度计和数字电位器。该设备是低成本LCD对比度和/或亮度控制，电源电压的理想选择调整，电池充电电流调节。DS
2012-12-3
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