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DS1230AB价格
参考价格：￥104.6154
型号：DS1230AB-100+ 品牌：Maxim 备注：这里有DS1230AB多少钱，2025年最近7天走势，今日出价，今日竞价，DS1230AB批发/采购报价，DS1230AB行情走势销售排行榜，DS1230AB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1230AB | 256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 |   | |
DS1230AB | 256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Dallas | | |
DS1230AB | 256k非易失SRAM | AD 亚德诺 | | |
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | | ||
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | Maxim 美信 | | ||
Customer Specification Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .1875 x .020 Inches b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage N/A e) Total Number of Ends 120 f) Appro | ALPHAWIRE | | ||
Variable RF Inductor 文件：325.82 Kbytes Page：2 Pages | YANTEL 研通高频 | | ||
SMT Breakout PCB Set For SOT-23, SOT-89, SOT- 223 and TO252 文件：155.38 Kbytes Page：2 Pages | Adafruit | | ||
PC Board Mountable Pressure Sensor 文件：183.22 Kbytes Page：5 Pages | TEC 泰科电子 | | ||
Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch 文件：392.5 Kbytes Page：16 Pages | ALLEGRO | |
DS1230AB产品属性
- 类型
描述
- 型号
DS1230AB
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
256k Nonvolatile SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLAS |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
DALLAS |
25+ |
DIP |
996880 |
只做原装,欢迎来电资询 |
|||
DALLAS |
25+ |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
||||
Maxim |
22+ |
28EDIP |
9000 |
原厂渠道,现货配单 |
|||
DALLAS |
25+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
Dallas(达拉斯) |
24+ |
N/A |
7298 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
MAXIM |
23+ |
MOD |
8888 |
专做原装正品,假一罚百! |
|||
INTERSIL |
22+ |
SOP |
8000 |
原装正品支持实单 |
|||
DALLAS |
23+ |
DIP28 |
6200 |
专业分销全系列产品!绝对原装正品!量大可订!价格优 |
|||
DALLAS |
24+ |
DIP |
119 |
DS1230AB规格书下载地址
DS1230AB参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DS1243Y
- DS1243
- DS1239
- DS1238S
- DS1238A
- DS1238
- DS1236A
- DS1236
- DS1235Y
- DS1233M
- DS1233D
- DS1233A
- DS1233
- DS1232S
- DS1232N
- DS1232
- DS1231S
- DS1231
- DS1230Y-150+
- DS1230Y-120IND+
- DS1230Y-120+
- DS1230Y-100+
- DS1230Y
- DS1230WP-150+
- DS1230WP-100+
- DS1230W-150+
- DS1230W-100IND+
- DS1230W-100+
- DS1230W
- DS1230ABP-70IND+
- DS1230ABP-70+
- DS1230ABP-100+
- DS1230AB-85+
- DS1230AB-70IND+
- DS1230AB-70+
- DS1230AB-200+
- DS1230AB-150+
- DS1230AB-120IND+
- DS1230AB-120+
- DS1230AB-100+
- DS123
- DS1228
- DS1227S
- DS1227
- DS1226
- DS1225Y-200+
- DS1225Y-150+
- DS1225Y
- DS1225AD-85+
- DS1225AD-70IND+
- DS1225AD-70+
- DS1225AD-200IND+
- DS1225AD-200+
- DS1225AD-170+
- DS1225AD-150IND+
- DS1225AD-150+
- DS1225AB-85+
- DS1225AB-70IND+
- DS1225AB-70+
- DS1225AB-200IND+
- DS1225AB-200+
- DS1225AB-170+
- DS1225AB-150IND+
- DS1225AB-150+
- DS1225
- DS1222
- DS1221
- DS1220Y
- DS1220AD-200IND+
- DS1220AD-200+
- DS1220
- DS1218S
- DS1218
- DS1217M
- DS1217A
- DS1217
- DS1216H
- DS1216F
- DS1216E
- DS1216D
DS1230AB数据表相关新闻
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DS1085Z-50+
2023-11-3DS1230AB-70IND
进口代理
2023-10-27DS1233AZ-10+
DS1233AZ-10+
2022-9-28DS1232LP+，美信珠海代理商，MAXIM珠海代理商
DS1232LP+，美信珠海代理商，MAXIM珠海代理商
2020-10-31DS1225AB200，买电子元器件就找兴中扬，一站式配齐，
DS1225AB200，买电子元器件就找兴中扬，一站式配齐，
2019-11-30DS1050-5位，可编程，脉宽调制器-1kHz时，为5kHz，10kHz时，和25KHZ
DS1050是一个可编程的，5位，脉宽调制器采用2线可寻址控制接口。 DS1050经营范围从2.7V至5.5V的电源供应。 PWM输出提供了一个信号，从0V到VCC的波动。 DS1050需要一个典型工作电流为50 A和一个可编程的关断电源电流1 A四个标准的PWM输出频率，并提供包括1kHz时，为5kHz和10kHz和25kHz的。 2线寻址接口允许一个单一的2线总线上的多个设备的操作，并提供兼容性与其他Dallas Semiconductor的2线的设备，如实时时钟（RTC的），数字温度计和数字电位器。该设备是低成本LCD对比度和/或亮度控制，电源电压的理想选择调整，电池充电电流调节。 DS
2012-12-3
DdatasheetPDF页码索引
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