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DS1230AB价格
参考价格:¥104.6154
型号:DS1230AB-100+ 品牌:Maxim 备注:这里有DS1230AB多少钱,2025年最近7天走势,今日出价,今日竞价,DS1230AB批发/采购报价,DS1230AB行情走势销售排行榜,DS1230AB报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
DS1230AB | 256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | ||
DS1230AB | 256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Dallas | ||
DS1230AB | 256k非易失SRAM | AD 亚德诺 | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | Dallas | |||
封装/外壳:28-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 256KBIT PAR 28EDIP 集成电路(IC) 存储器 | AD 亚德诺 | |||
封装/外壳:28-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 256KBIT PAR 28EDIP 集成电路(IC) 存储器 | AD 亚德诺 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
256k Nonvolatile SRAM 文件:222.21 Kbytes Page:10 Pages | Maxim 美信 | |||
Customer Specification Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .1875 x .020 Inches b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage N/A e) Total Number of Ends 120 f) Appro | ALPHAWIRE | |||
Variable RF Inductor 文件:325.82 Kbytes Page:2 Pages | YANTEL 研通高频 | |||
SMT Breakout PCB Set For SOT-23, SOT-89, SOT- 223 and TO252 文件:155.38 Kbytes Page:2 Pages | Adafruit | |||
PC Board Mountable Pressure Sensor 文件:183.22 Kbytes Page:5 Pages | TEC 泰科电子 | |||
Ultra-Sensitive Dual-Channel Quadrature Hall-Effect Bipolar Switch 文件:392.5 Kbytes Page:16 Pages | ALLEGRO |
DS1230AB产品属性
- 类型
描述
- 型号
DS1230AB
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
256k Nonvolatile SRAM
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DALLAS |
22+ |
DIP |
8200 |
全新进口原装现货 |
|||
DALLAS |
23+ |
PWRCP |
65480 |
||||
DALLAS特价 |
20+ |
DIP |
2950 |
特价现货超低出售 |
|||
DALLAS |
03+ |
DIP |
23 |
原装现货 |
|||
DALLAS |
24+ |
DIP |
30000 |
一级代理原装现货假一赔十 |
|||
DALLAS |
05+ |
DIP |
1289 |
全新原装绝对自己公司现货 |
|||
DALLAS |
24+ |
DIP |
7671 |
原装正品.优势专营 |
|||
24+ |
SOIC-8 |
37500 |
原装正品现货,价格有优势! |
||||
DALLAS SEMICONDUCTOR |
24+ |
DIP |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
Dallas(达拉斯) |
24+ |
N/A |
7298 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
DS1230AB规格书下载地址
DS1230AB参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DS1243Y
- DS1243
- DS1239
- DS1238S
- DS1238A
- DS1238
- DS1236A
- DS1236
- DS1235Y
- DS1233M
- DS1233D
- DS1233A
- DS1233
- DS1232S
- DS1232N
- DS1232
- DS1231S
- DS1231
- DS1230Y-150+
- DS1230Y-120IND+
- DS1230Y-120+
- DS1230Y-100+
- DS1230Y
- DS1230WP-150+
- DS1230WP-100+
- DS1230W-150+
- DS1230W-100IND+
- DS1230W-100+
- DS1230W
- DS1230ABP-70IND+
- DS1230ABP-70+
- DS1230ABP-100+
- DS1230AB-85+
- DS1230AB-70IND+
- DS1230AB-70+
- DS1230AB-200+
- DS1230AB-150+
- DS1230AB-120IND+
- DS1230AB-120+
- DS1230AB-100+
- DS123
- DS1228
- DS1227S
- DS1227
- DS1226
- DS1225Y-200+
- DS1225Y-150+
- DS1225Y
- DS1225AD-85+
- DS1225AD-70IND+
- DS1225AD-70+
- DS1225AD-200IND+
- DS1225AD-200+
- DS1225AD-170+
- DS1225AD-150IND+
- DS1225AD-150+
- DS1225AB-85+
- DS1225AB-70IND+
- DS1225AB-70+
- DS1225AB-200IND+
- DS1225AB-200+
- DS1225AB-170+
- DS1225AB-150IND+
- DS1225AB-150+
- DS1225
- DS1222
- DS1221
- DS1220Y
- DS1220AD-200IND+
- DS1220AD-200+
- DS1220
- DS1218S
- DS1218
- DS1217M
- DS1217A
- DS1217
- DS1216H
- DS1216F
- DS1216E
- DS1216D
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2019-11-30DS1050-5位,可编程,脉宽调制器-1kHz时,为5kHz,10kHz时,和25KHZ
DS1050是一个可编程的,5位,脉宽调制器采用2线可寻址控制接口。 DS1050经营范围从2.7V至5.5V的电源供应。 PWM输出提供了一个信号,从0V到VCC的波动。 DS1050需要一个典型工作电流为50 A和一个可编程的关断电源电流1 A四个标准的PWM输出频率,并提供包括1kHz时,为5kHz和10kHz和25kHz的。 2线寻址接口允许一个单一的2线总线上的多个设备的操作,并提供兼容性与其他Dallas Semiconductor的2线的设备,如实时时钟(RTC的),数字温度计和数字电位器。该设备是低成本LCD对比度和/或亮度控制,电源电压的理想选择调整,电池充电电流调节。 DS
2012-12-3
DdatasheetPDF页码索引
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