DS1230AB价格
参考价格：￥104.6154
型号：DS1230AB-100+ 品牌：Maxim 备注：这里有DS1230AB多少钱，2026年最近7天走势，今日出价，今日竞价，DS1230AB批发/采购报价，DS1230AB行情走势销售排行榜，DS1230AB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1230AB | 256k非易失SRAM DS1230 256k非易失(NV) SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1230器件可以用来替代现有的32k x 8静态RAM，符合通用的单字节宽、28引脚DIP标准。DIP器件还与28256 EEPROM的引脚匹配，可直接替换并增强其性能。小尺寸模块封装的DS1230器件专为表面贴装应用设计。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代32k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS操作\n• 70ns的读写存取时间\n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1230Y)\n• 可选择±5% VCC工作范围(DS1230AB)\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• JEDEC标准的28引脚DIP封装\n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerCap提; | AD 亚德诺 |   | |
DS1230AB | 256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | |
DS1230AB | 256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | DALLAS | | |
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio | DALLAS | | ||
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages | MAXIM 美信 | | ||
111-Bit 2/3-Duty Controller/Driver with Digital Dimming Function GENERAL DESCRIPTION The MSC1230 is a Bi-CMOS display driver with digital dimming function. It enables switching between 1/3-duty vacuum fluorescent (VF) display tube and universal VF display tube by pin control. The MSC1230 consists of a 112-bit shift register, a 111-bit latch, a 10-bit digital | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 | | ||
Integrated Circuit FM Multiplex Stereo Demodulator Description: The NTE1230 is a monolithic integrated circuit in a 16–Lead DIP type package designed for use as an FM stereo multiplex demodulator. This device includes 2 channel amplifiers that can make the 0dB line output. | NTE | | ||
SNUBBERLESS TRIAC DESCRIPTION The T1020/1030W triacs use high performance glass passivated chip technology,housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppres sion of R-C network, and is suitable for applications such as phase control and static switch on inductive | STMICROELECTRONICS 意法半导体 | | ||
12-Bit, uP Compatible, Double-Buffered D to A Converters 文件：361.79 Kbytes Page：18 Pages | NSC 国半 | | ||
12-Bit, uP Compatible, Double-Buffered D to A Converters 文件：361.79 Kbytes Page：18 Pages | NSC 国半 | |
DS1230AB产品属性
- 类型
描述
- Memory Type：
NV SRAM
- Memory Size：
32K x 8
- Bus Type：
Parallel
- Features：
DIP with Internal Battery
- VSUPPLY (min)(V)：
4.75
- VSUPPLY (max)(V)：
5.25
- RoHS Available：
See Data Sheet
- Oper. Temp.(°C)：
-40 to +85
- Package/ Pins：
MOD/28
- Smallest Available Pckg. (max w/pins)(mm2)：
629.9
- Budgetary Price (See Notes)：
$14.97 @1k
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EVIDEO |
2016+ |
QFP |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DALLAS |
24+/25+ |
233 |
原装正品现货库存价优 |
||||
DALLAS |
26+ |
SOP-8 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
N_A |
25+ |
8888 |
专做原装正品,假一罚百! |
||||
NS/美国国半 |
25+ |
8 |
3925 |
全新原装正品支持含税 |
|||
AZOTEQ |
26+ |
NA |
19587 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
DALLAS |
22+ |
SOP-8 |
5000 |
只做原装鄙视假货15118075546 |
|||
DALLAS |
25+ |
SOP8 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
DALLAS |
2450+ |
DIP28 |
9485 |
只做原厂原装正品终端客户免费申请样品 |
|||
Maxim |
26+ |
28-DIP |
60000 |
只有原装,可BOM表配单 |
DS1230AB芯片相关品牌
DS1230AB规格书下载地址
DS1230AB参数引脚图相关
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- F330
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- f1212
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- em35
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- e251
- d类功放
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- DS1233D
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- DS1233
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- DS1231
- DS1230Y-150+
- DS1230Y-120IND+
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- DS1230Y-100+
- DS1230Y
- DS1230WP-150+
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- DS1230W-150+
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- DS1230AB-120+
- DS1230AB-100+
- DS123
- DS1228
- DS1227S
- DS1227
- DS1226
- DS1225Y-200+
- DS1225Y-150+
- DS1225Y
- DS1225AD-85+
- DS1225AD-70IND+
- DS1225AD-70+
- DS1225AD-200IND+
- DS1225AD-200+
- DS1225AD-170+
- DS1225AD-150IND+
- DS1225AD-150+
- DS1225AB-85+
- DS1225AB-70IND+
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- DS1225AB-200IND+
- DS1225AB-200+
- DS1225AB-170+
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- DS1225AB-150+
- DS1225
- DS1222
- DS1221
- DS1220Y
- DS1220AD-200IND+
- DS1220AD-200+
- DS1220
- DS1218S
- DS1218
- DS1217M
- DS1217A
- DS1217
- DS1216H
- DS1216F
- DS1216E
- DS1216D
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2012-12-3
DdatasheetPDF页码索引
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- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
