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DS1230Y价格
参考价格：￥104.0933
型号：DS1230Y-100+ 品牌：Maxim 备注：这里有DS1230Y多少钱，2024年最近7天走势，今日出价，今日竞价，DS1230Y批发/采购报价，DS1230Y行情走势销售排行榜，DS1230Y报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1230Y | 256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. |  |   |
DS1230Y | 256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | Dallas Dallas Semiconductor Corp. | | |
DS1230Y | 256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 |  | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | Dallas Dallas Semiconductor Corp. | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | Dallas Dallas Semiconductor Corp. | | | |
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | |
DS1230Y产品属性
- 类型
描述
- 型号
DS1230Y
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
256k Nonvolatile SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAXIM/美信 |
22+ |
DIP |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
DALLAS |
23+ |
NA/ |
3335 |
原装现货,当天可交货,原型号开票 |
|||
Maxim(美信) |
23+ |
标准封装 |
17048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
MAXIM/美信 |
22+ |
DIP |
3000 |
支持任何机构检测 只做原装正品 |
|||
DALLAS |
22+ |
DIP28 |
800000 |
原装正品 |
|||
DALLAS |
22+ |
DIP |
3000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
MAXIM |
23+ |
DIP |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
|||
MAXIM/美信 |
23+ |
DIP |
25000 |
原装现货假一赔十 |
|||
DALLAS |
22+ |
DIP |
600 |
只做原装正品现货 |
|||
MAXIM |
21+ |
DIP |
3000 |
原厂订货价格优势,可开13%的增值税票 |
DS1230Y芯片相关品牌
DS1230Y规格书下载地址
DS1230Y参数引脚图相关
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- DS1230AB-100+
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- DS1225AD-70IND+
- DS1225
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- DS1220
- DS1218S
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- DS1217M
- DS1217A
- DS1217
- DS1216H
- DS1216F
- DS1216E
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2023-10-27DS1233AZ-10+
DS1233AZ-10+
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2019-11-30DS1259-电池管理芯片
特点促进不间断电源只有当主VCC是不可用的使用电池低正向压降电源故障信号中断的处理器，或写保护内存功耗小于100nA的电池电流低电量警告信号电池可电断开后命令当VCC应用，电池会自动重新连接配合DS1212非易失控制器×16片直接与备份16的RAM可选的16引脚SOIC表面贴装封装DS1259电池管理芯片是一个低成本的电池管理系统的便携性和非易失性电子设备。电池输入引脚连接到一个电池
2013-1-1
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