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位置：首页 > IC中文资料 > DS1230Y

DS1230Y价格

参考价格：￥104.0933

型号：DS1230Y-100+ 品牌：Maxim 备注：这里有DS1230Y多少钱，2026年最近7天走势，今日出价，今日竞价，DS1230Y批发/采购报价，DS1230Y行情走势销售排行榜，DS1230Y报价。

型号	功能描述	生产厂家企业	LOGO
DS1230Y	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y	256k非易失SRAM DS1230 256k非易失(NV) SRAM为262,144位、全静态非易失SRAM，按照8位、32,768字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1230器件可以用来替代现有的32k x 8静态RAM，符合通用的单字节宽、28引脚DIP标准。DIP器件还与28256 EEPROM的引脚匹配，可直接替换并增强其性能。小尺寸模块封装的DS1230器件专为表面贴装应用设计。该器件没有写次数限制，可直接与微处理器接口、不需要额外的支持电路。 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代32k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS操作\n• 70ns的读写存取时间\n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1230Y)\n• 可选择±5% VCC工作范围(DS1230AB)\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• JEDEC标准的28引脚DIP封装\n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerCap提;	AD 亚德诺	AD
DS1230Y	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	DALLAS	DALLAS
DS1230Y	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM
DS1230Y/AB	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-100	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-100IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-100-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-120	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-120IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-120-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-150	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-150IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-150-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-200	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-200IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-200-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-70	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-70IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-70-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-85	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-85IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-85-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-AB	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P100	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-100	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P100IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-100-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P120	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-120	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P120IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-120-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P150	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-150	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P150IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-150-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P200	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-200	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P200IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-200-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P70	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-70	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P70IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-70-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P85	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-85	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y-P85IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YP-85-IND	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230YSLASHAB	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio	DALLAS	DALLAS
DS1230Y_10	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	DALLAS	DALLAS
DS1230Y-100+	封装/外壳：28-DIP 模块（0.600"，15.24mm）包装：管件描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC）存储器	AD 亚德诺	AD
DS1230Y-120	封装/外壳：28-DIP 模块（0.600"，15.24mm）包装：管件描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC）存储器	AD 亚德诺	AD
DS1230Y-120	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM
DS1230Y-200	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
DS1230Y-70+	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM
DS1230Y-70+	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM
DS1230Y-70IND+	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM
DS1230Y-70IND+	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM
DS1230YP-70+	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM
DS1230YP-70+	256k Nonvolatile SRAM 文件：222.21 Kbytes Page：10 Pages	MAXIM 美信	MAXIM

DS1230Y产品属性

类型
描述
Memory Type：
NV SRAM
Memory Size：
32K x 8
Bus Type：
Parallel
Features：
DIP with Internal Battery
VSUPPLY (min)(V)：
4.5
VSUPPLY (max)(V)：
5.5
RoHS Available：
See Data Sheet
Oper. Temp.(°C)：
-40 to +85
Package/ Pins：
MOD/28
Smallest Available Pckg. (max w/pins)(mm2)：
629.9
Budgetary Price (See Notes)：
$15.57 @1k

DS1230Y供应商更多...

更新时间：2026-8-4 8:38:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市中赛美电子科技有限公司	DS1230Y-100+	MAXIM/美信	25+	DIP	3000	支持任何机构检测只做原装正品	询价
瀚佳科技(深圳)有限公司	DS1230Y-100+	MAXIM/美信	24+	DIP	9863	一级代理//放心购买	询价
深圳市云美电子科技有限公司	DS1230YP-70IND+	DALLAS	24+	SOP	66500	只做原装进口现货	询价
深圳市东来宝电子科技有限公司	DS1230YP-70	DALLAS	24+	PCM	9960	郑重承诺只做原装进口现货	询价
深圳市华来深电子有限公司	DS1230Y-100+	MAXIM	23+	28EDIP	2890	长期有货,进口原装,绝无虚假。	询价
深圳市高捷芯城科技有限公司	DS1230Y-200+	Maxim(美信)	24+	标准封装	17048	原厂渠道供应,大量现货,原型号开票。	询价
中天科工半导体（深圳）有限公司	DS1230Y-70	ADI/亚德诺	25+	原装	32360	ADI/亚德诺全新特价DS1230Y-70即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	DS1230Y-100+	DALLAS	2430+	DIP28	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市拓亿芯电子有限公司	DS1230Y-100+	MAXIM/美信	26+	DIP	12000	只做原装正品	询价
深圳市富达微科技有限公司	DS1230Y-70IND+	Maxim	24+	28-DIP	30000	原厂原装,价格优势,欢迎洽谈!	询价

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DS1230Y规格书下载地址

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DdatasheetPDF页码索引

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找IC，尽在114IC

DS1230Y价格

DS1230Y产品属性

DS1230Y供应商更多...

DS1230Y芯片相关品牌

DS1230Y规格书下载地址

DS1230Y参数引脚图相关

DS1230Y数据表相关新闻

DS1233AZ-15 SOT-223-3 电源管理 IC 监控电路 全新原装

DS1085Z-50+ ADI(亚德诺)/MAXIM(美信) SOP8 原装现货

DS1230AB-70IND

DS1233AZ-10+

DS1232LP+，美信珠海代理商，MAXIM珠海代理商

DS1225AB200，买电子元器件就找兴中扬，一站式配齐，

DdatasheetPDF页码索引

DS1233AZ-15 SOT-223-3 电源管理 IC 监控电路全新原装