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DS1230Y价格
参考价格：￥104.0933
型号：DS1230Y-100+ 品牌：Maxim 备注：这里有DS1230Y多少钱，2025年最近7天走势，今日出价，今日竞价，DS1230Y批发/采购报价，DS1230Y行情走势销售排行榜，DS1230Y报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1230Y | 256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 |  |   |
DS1230Y | 256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | |
DS1230Y | 256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 |  | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | DallasDallas Semiconductor 亚德诺亚德诺半导体 | | | |
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
封装/外壳：28-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 256KBIT PAR 28EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | | |
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | | |
256kNonvolatileSRAM 文件：222.21 Kbytes Page：10 Pages | MaximMaxim Integrated Products 美信美信半导体 | | |
DS1230Y产品属性
- 类型
描述
- 型号
DS1230Y
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
256k Nonvolatile SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLAS |
19+ |
DIP-28 |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
DALLAS |
24+ |
DIP28 |
12 |
只做原厂渠道 可追溯货源 |
|||
DALLAS |
23+ |
DIP28 |
65480 |
||||
DALLAS |
0545+ |
DIP-28 |
85 |
原装现货 |
|||
DALLAS |
22+ |
DIP32 |
5000 |
全新原装现货!价格优惠!可长期 |
|||
MAXIM/美信 |
23+ |
DIP |
25000 |
原装现货假一赔十 |
|||
DALLAS |
0628J |
DIP |
1356 |
全新原装绝对自己公司现货 |
|||
DALLAS |
2404+ |
DIP |
3300 |
现货正品原装,假一赔十 |
|||
MAXIM |
23+ |
DIP |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
|||
DALLAS |
24+ |
DIP |
9630 |
我们只做原装正品现货!量大价优! |
DS1230Y芯片相关品牌
DS1230Y规格书下载地址
DS1230Y参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DS1244P
- DS1244
- DS1243Y
- DS1243
- DS1239
- DS1238S
- DS1238A
- DS1238
- DS1236A
- DS1236
- DS1235Y
- DS1233M
- DS1233D
- DS1233A
- DS1233
- DS1232S
- DS1232N
- DS1232
- DS1231S-50+
- DS1231S-35+
- DS1231S-20N+
- DS1231S-20+
- DS1231S
- DS1231-50+
- DS1231-35+
- DS1231-20N+
- DS1231-20+
- DS1231
- DS1230YP-70IND+
- DS1230YP-70+
- DS1230YP-100+
- DS1230Y-85+
- DS1230Y-70IND+
- DS1230Y-70+
- DS1230Y-200IND+
- DS1230Y-200+
- DS1230Y-150+
- DS1230Y-120IND+
- DS1230Y-120+
- DS1230Y-100+
- DS1230WP-150+
- DS1230WP-100+
- DS1230W-150+
- DS1230W-100IND+
- DS1230W-100+
- DS1230W
- DS1230ABP-70IND+
- DS1230ABP-70+
- DS1230ABP-100+
- DS1230AB-85+
- DS1230AB-70IND+
- DS1230AB-70+
- DS1230AB-200+
- DS1230AB-150+
- DS1230AB-120IND+
- DS1230AB-120+
- DS1230AB-100+
- DS123
- DS1228
- DS1227S
- DS1227
- DS1226
- DS1225Y-200+
- DS1225Y-150+
- DS1225Y
- DS1225AD-85+
- DS1225AD-70IND+
- DS1225
- DS1222
- DS1221
- DS1220Y
- DS1220
- DS1218S
- DS1218
- DS1217M
- DS1217A
- DS1217
- DS1216H
- DS1216F
- DS1216E
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DS1225AB200，买电子元器件就找兴中扬，一站式配齐，
2019-11-30
DdatasheetPDF页码索引
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