Industry?셲 smallest high power emitter for use in close-packed applications requiring an undomed solution

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SBR 肖特基二极管

丝印代码：DS120005D3；3 Generation 1200V/ 5 A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp

丝印代码：DS120020C3；3 rd Generation 1200V /20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com

丝印代码：DS120020H3；3 rd Generation 1200V/20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com

丝印代码：DS120002C3；3 rd Generation 1200V/2A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120002D3；3 rd Generation 1200V/2A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120003D3；3rd Generation 1200V/3A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120005C3；3 rd Generation 1200V 5A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120005D3；3rd Generation 1200V/5A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120010C3；3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120010C5；5th Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

丝印代码：DS120010D3；3rd Generation 1200V/10 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120010E3；3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120010G3；3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS12000H3；3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120015C3；3rd Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120015H3；3rd Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120015H5；5th Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

丝印代码：DS120020G3；3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120020H3；3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revo lutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range fro m 55 to 175 RoHS compliant

丝印代码：DS120020H5；5th Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

丝印代码：DS120030G3；3rd Generation 1200V/30A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120030H3；3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120040G3；3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120040H3；3rd Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120040H5；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

丝印代码：DS120040J5；5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

丝印代码：DS120050H3；3rd Generation 1200V/50A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

丝印代码：DS120060G3；3rd Generation 1200V/60A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

1200 Watts Distributed Power System

SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing

Distributed Power System

Special Features • Active power factor correction • EN61000-3-2 harmonic compliance • Active AC inrush control • 1U X 2U form factor • 21.71 W / in3 • +12 Vdc Output • +3.3 Vdc stand-by (5 V standby - consult factory) • No minimum load required • Hot plug operation • N + 1 redundant • I

Serial RAM Chip

DESCRIPTION The DS1200 serial RAM chip is a miniature read/write memory that can randomly access individual 8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a microprocessor is minimized by on-chip circuitry, which permits data transfers with on

Distributed Power System

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

Embedded Power for Business-Critical Continuity

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

Distributed Power System

Special Features • Active power factor correction • EN61000-3-2 harmonic compliance • Active AC inrush control • 1U X 2U form factor • 21.71 W / in3 • +12 Vdc Output • +3.3 Vdc stand-by (5 V standby - consult factory) • No minimum load required • Hot plug operation • N + 1 redundant • I

1200 Watts Distributed Power System

SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing

1200 Watts Distributed Power System

SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing

Distributed Power System

Special Features • Active power factor correction • EN61000-3-2 harmonic compliance • Active AC inrush control • 1U X 2U form factor • 21.71 W / in3 • +12 Vdc Output • +3.3 Vdc stand-by (5 V standby - consult factory) • No minimum load required • Hot plug operation • N + 1 redundant • I

Distributed Power System

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

Embedded Power for Business-Critical Continuity

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

Embedded Power for Business-Critical Continuity

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

Distributed Power System

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

1200 Watts Distributed Power System

SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing

1200 Watts Distributed Power System

SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing

Embedded Power for Business-Critical Continuity

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

Distributed Power System

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

1200 Watt Distributed Power System

SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1

1200 Watt Distributed Power System

SPECIAL FEATURES GR-1089-CORE Issue 4 compliant 1U X 2U form factor 21.71 W/in3 +12 V output +3.3 V standby (5 V standby option) No minimum load required Hot plug operation N+1 redundant Internal OR’ing fets Active current sharing shares with DS1200 AC unit (10 to 100 load) Built-in co

1200 Watt Distributed Power System

SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1

1200 Watt Distributed Power System

SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1

1200 Watt Distributed Power System

SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1

1200 Watt Distributed Power System

SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1

Embedded Power for Business-Critical Continuity

Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund

Electronic Tag

Electronic Tag

Serial Timekeeping Chip

DESCRIPTION The DS1202 Serial Timekeeping Chip contains a real time clock/calendar and 24 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real time clock/calendar provides seconds, minutes, hours, day, date, month, and year information. FEATURES • R

Serial Timekeeping Chip

DESCRIPTION The DS1202 Serial Timekeeping Chip contains a real time clock/calendar and 24 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real time clock/calendar provides seconds, minutes, hours, day, date, month, and year information. FEATURES • R

Serial Timekeeping Chip

DESCRIPTION The DS1202 Serial Timekeeping Chip contains a real time clock/calendar and 24 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real time clock/calendar provides seconds, minutes, hours, day, date, month, and year information. FEATURES • R

Serial Timekeeping Chip

DESCRIPTION The DS1202 Serial Timekeeping Chip contains a real time clock/calendar and 24 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real time clock/calendar provides seconds, minutes, hours, day, date, month, and year information. FEATURES • R

Serial Timekeeping Chip

DESCRIPTION The DS1202 Serial Timekeeping Chip contains a real time clock/calendar and 24 bytes of static RAM. It communicates with a microprocessor via a simple serial interface. The real time clock/calendar provides seconds, minutes, hours, day, date, month, and year information. FEATURES • R