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DS1200价格
参考价格：￥2673.6820
型号：DS1200-3 品牌：Emerson 备注：这里有DS1200多少钱，2026年最近7天走势，今日出价，今日竞价，DS1200批发/采购报价，DS1200行情走势销售排行榜，DS1200报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1200 | Serial RAM Chip DESCRIPTION The DS1200 serial RAM chip is a miniature read/write memory that can randomly access individual 8-bit strings (bytes) or sequentially access the entire 1024-bit contents (burst). Interface cost to a microprocessor is minimized by on-chip circuitry, which permits data transfers with on | DALLAS |   | |
DS1200 | Distributed Power System Special Features • Active power factor correction • EN61000-3-2 harmonic compliance • Active AC inrush control • 1U X 2U form factor • 21.71 W / in3 • +12 Vdc Output • +3.3 Vdc stand-by (5 V standby - consult factory) • No minimum load required • Hot plug operation • N + 1 redundant • I | EMERSON-NETWORKPOWER 艾默生 | | |
DS1200 | 1200 Watts Distributed Power System SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing | ADVANCEDENERGY 先进能源工业 | | |
DS1200 | 封装/外壳：16-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC SRAM 1KBIT I2C 4MHZ 16SOIC 集成电路（IC） 存储器 | AD 亚德诺 | | |
DS1200 | 串行RAM芯片 | AD 亚德诺 | | |
DS1200 | 1200 Watts Distributed Power System 文件：472.03 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | |
DS1200 | Serial RAM Chip 文件：233.99 Kbytes Page：7 Pages | MAXIM 美信 | | |
丝印代码：DS120005D3；3 Generation 1200V/ 5 A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS comp | SANAN 三安光电 | | ||
丝印代码：DS120020C3；3 rd Generation 1200V /20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com | SANAN 三安光电 | | ||
丝印代码：DS120020H3；3 rd Generation 1200V/20A SiC Schottky Barrier Diode AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com | SANAN 三安光电 | | ||
丝印代码：DS120002C3；3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120002D3；3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120003D3；3rd Generation 1200V/3A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120005C3；3 rd Generation 1200V 5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120005D3；3rd Generation 1200V/5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120010C3；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120010C5；5th Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120010D3；3rd Generation 1200V/10 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120010E3；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120010G3；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS12000H3；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120015C3；3rd Generation 1200V/15A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120015H3；3rd Generation 1200V/15A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120015H5；5th Generation 1200V/15A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120020G3；3rd Generation 1200V/20A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120020H3；3rd Generation 1200V/20A SiC Schottky Barrier Diode Revo lutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range fro m 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120020H5；5th Generation 1200V/20A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120030G3；3rd Generation 1200V/30A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120030H3；3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120040G3；3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120040H3；3rd Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120040H5；5th Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120040J5；5th Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120050H3；3rd Generation 1200V/50A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
丝印代码：DS120060G3；3rd Generation 1200V/60A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
Distributed Power System Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
Embedded Power for Business-Critical Continuity Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
Distributed Power System Special Features • Active power factor correction • EN61000-3-2 harmonic compliance • Active AC inrush control • 1U X 2U form factor • 21.71 W / in3 • +12 Vdc Output • +3.3 Vdc stand-by (5 V standby - consult factory) • No minimum load required • Hot plug operation • N + 1 redundant • I | EMERSON-NETWORKPOWER 艾默生 | | ||
1200 Watts Distributed Power System SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing | ADVANCEDENERGY 先进能源工业 | | ||
1200 Watts Distributed Power System SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing | ADVANCEDENERGY 先进能源工业 | | ||
Distributed Power System Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
Embedded Power for Business-Critical Continuity Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
Distributed Power System Special Features • Active power factor correction • EN61000-3-2 harmonic compliance • Active AC inrush control • 1U X 2U form factor • 21.71 W / in3 • +12 Vdc Output • +3.3 Vdc stand-by (5 V standby - consult factory) • No minimum load required • Hot plug operation • N + 1 redundant • I | EMERSON-NETWORKPOWER 艾默生 | | ||
Embedded Power for Business-Critical Continuity Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
Distributed Power System Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
1200 Watts Distributed Power System SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing | ADVANCEDENERGY 先进能源工业 | | ||
1200 Watts Distributed Power System SPECIAL FEATURES Active power factor correction EN61000-3-2 harmonic compliance Active AC inrush control 1U X 2U form factor 21.71 W/in3 +12 VDC Output +3.3 VDC or +5.0 VDC stand-by No minimum load required Hot plug operation N + 1 redundant Internal OR’ing fets Active current sharing | ADVANCEDENERGY 先进能源工业 | | ||
Embedded Power for Business-Critical Continuity Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
Distributed Power System Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
1200 Watt Distributed Power System SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1 | ARTESYN | | ||
1200 Watt Distributed Power System SPECIAL FEATURES GR-1089-CORE Issue 4 compliant 1U X 2U form factor 21.71 W/in3 +12 V output +3.3 V standby (5 V standby option) No minimum load required Hot plug operation N+1 redundant Internal OR’ing fets Active current sharing shares with DS1200 AC unit (10 to 100 load) Built-in co | ADVANCEDENERGY 先进能源工业 | | ||
1200 Watt Distributed Power System SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1 | ARTESYN | | ||
1200 Watt Distributed Power System SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1 | ARTESYN | | ||
1200 Watt Distributed Power System SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1 | ARTESYN | | ||
1200 Watt Distributed Power System SPECIAL FEATURES ■ GR-1089-CORE Issue 4 compliant ■ 1U X 2U form factor ■ 21.71 W / in3 ■ +12 Vdc Output ■ +3.3 Vdc standby (5 V standby option) ■ No minimum load required ■ Hot plug operation ■ N + 1 redundant ■ Internal OR’ing fets ■ Active current sharing shares with DS1200 AC unit (1 | ARTESYN | | ||
Embedded Power for Business-Critical Continuity Special Features • 1200W output power • High-power • 1U x 2U power supply • High-density design: 21.66W/in3 • Active Power Factor Correction • EN61000-3-2 Harmonic compliance • Inrush current control • 80plus Platinum Efficiency • N+1 or N+N Redundant • Hot plug operation • N + 1 redund | ARTESYN | | ||
1200 Watts Distributed Power System 文件：472.03 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
1200 Watts Distributed Power System 文件：472.03 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
1200 Watts Distributed Power System 文件：472.03 Kbytes Page：4 Pages | EMERSON-NETWORKPOWER 艾默生 | | ||
包装：盒 描述：AC/DC CONVERTER 12V 1200W 电源 - 外部/内部（板外） AC DC 转换器 | ETC 知名厂家 | ETC | |
DS1200产品属性
- 类型
描述
- 型号
DS1200
- 功能描述
IC SRAM 1KBIT 4MHZ 10DIP
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
150
- 系列
- 格式 -
- 存储器
EEPROMs - 串行
- 存储器类型
EEPROM
- 存储容量
4K(2 x 256 x 8)
- 速度
400kHz
- 接口
I²C，2 线串口
- 电源电压
2.5 V ~ 5.5 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
8-VFDFN 裸露焊盘
- 供应商设备封装
8-DFN（2x3）
- 包装
管件
- 产品目录页面
1445(CN2011-ZH PDF)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALL |
24+ |
DIP-10 |
207 |
||||
Maxim |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
dall |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
TIMONTA |
05+ |
原厂原装 |
4281 |
只做全新原装真实现货供应 |
|||
MAXIM/美信 |
24+ |
SOP16 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
Maxim |
22+ |
10PDIP |
9000 |
原厂渠道,现货配单 |
|||
MAXIM-DALLAS |
24+ |
SOP16 |
6980 |
原装现货,可开13%税票 |
|||
EMERSON |
25+ |
5 |
公司优势库存 热卖中! |
||||
MAXIM |
2025+ |
SOP16 |
3265 |
全新原厂原装产品、公司现货销售 |
|||
MAXIM/美信 |
23+ |
SOP16 |
238 |
DS1200规格书下载地址
DS1200参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DS1220AD-100IND+
- DS1220AD-100+
- DS1220AB-200IND+
- DS1220AB-200+
- DS1220AB-150IND+
- DS1220AB-150+
- DS1220AB-120+
- DS1220AB-100IND+
- DS1220AB-100+
- DS1218S+
- DS1218+
- DS1216B
- DS1216
- DS1215
- DS1213D
- DS1213C
- DS1213B
- DS1212Q
- DS1212
- DS1211
- DS1210SN+
- DS1210S+
- DS1210N+
- DS1210+
- DS1210
- DS120WV
- DS120W
- DS1208
- DS1205V
- DS1205S
- DS1204
- DS1202S
- DS1202N
- DS1202
- DS1201
- DS1200HE-3
- DS1200DC-3
- DS1200-3
- DS1-20-0002
- DS1-20-0001
- DS-120
- DS120
- DS1190N+
- DS1184
- DS1181LE+
- DS1181L
- DS118
- DS1-175-0005
- DS1-175-0004
- DS1-175-0003
- DS1-175-0002
- DS1-175-0001
- DS1173
- DS1172
- DS1171
- DS1170
- DS-117
- DS117
- DS1163
- DS1161
- DS1160
- DS116
- DS115WV
- DS115W
- DS115
- DS114T
- DS1145-101M-B
- DS1145-100M-B
- DS1145
- DS1140
- DS114
- DS1137-680M-B
- DS1137-470M-B
- DS1137-100M-B
- DS1135Z-8+
- DS1135Z-6+
- DS1135Z-30+
- DS1135Z-25+
DS1200数据表相关新闻
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DS1085Z-50+
2023-11-3DS1230AB-70IND
进口代理
2023-10-27DS1232LP+，美信珠海代理商，MAXIM珠海代理商
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2020-10-31DS1225AB200，买电子元器件就找兴中扬，一站式配齐，
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2019-4-4DS1050-5位，可编程，脉宽调制器-1kHz时，为5kHz，10kHz时，和25KHZ
DS1050是一个可编程的，5位，脉宽调制器采用2线可寻址控制接口。 DS1050经营范围从2.7V至5.5V的电源供应。 PWM输出提供了一个信号，从0V到VCC的波动。 DS1050需要一个典型工作电流为50 A和一个可编程的关断电源电流1 A四个标准的PWM输出频率，并提供包括1kHz时，为5kHz和10kHz和25kHz的。 2线寻址接口允许一个单一的2线总线上的多个设备的操作，并提供兼容性与其他Dallas Semiconductor的2线的设备，如实时时钟（RTC的），数字温度计和数字电位器。该设备是低成本LCD对比度和/或亮度控制，电源电压的理想选择调整，电池充电电流调节。 DS
2012-12-3
DdatasheetPDF页码索引
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- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
