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型号	功能描述	生产厂家企业	LOGO
DS-0106	MiniaturePressureSensors 文件：125.19 Kbytes Page：4 Pages	ASC	ASC
TN0106	N-Channel Enhancement-Mode Vertical DMOS FETs Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices	SUTEX	SUTEX
TN0106ND	N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
VN0106	N-Channel Enhancement-Mode Vertical DMOS FET Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX
VN0106NE	N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array? N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array	SUTEX	SUTEX
VP0106	P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan	SUTEX	SUTEX