型号 功能描述 生产厂家 企业 LOGO 操作
DRV8353

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV8353

100-V Three-Phase Smart Gate Driver

文件:3.77637 Mbytes Page:90 Pages

TI

德州仪器

DRV8353

100-V Three-Phase Smart Gate Driver

文件:3.77743 Mbytes Page:91 Pages

TI

德州仪器

DRV8353

100-V Three-Phase Smart Gate Driver

文件:2.75807 Mbytes Page:87 Pages

TI

德州仪器

DRV8353

具有电流分流放大器的最大 102V 三相智能栅极驱动器

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Extended TA operation -55 °C to 125 °C – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

文件:3.65462 Mbytes Page:97 Pages

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

文件:3.65462 Mbytes Page:97 Pages

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

文件:3.65462 Mbytes Page:97 Pages

TI

德州仪器

封装/外壳:40-WFQFN 裸露焊盘 功能:控制器 - 换向,方向管理 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:102-V MAX 3-PHASE FUNCTIONAL SAF 集成电路(IC) 电机驱动器,控制器

TI

德州仪器

100-V Three-Phase Smart Gate Driver

文件:3.77743 Mbytes Page:91 Pages

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

文件:3.15245 Mbytes Page:76 Pages

TI

德州仪器

DRV8353M 100-V Three-Phase Smart Gate Driver

文件:3.15245 Mbytes Page:76 Pages

TI

德州仪器

封装/外壳:40-WFQFN 裸露焊盘 功能:控制器 - 换向,方向管理 包装:管件 描述:100-V THREE-PHASE SMART GATE DRI 集成电路(IC) 电机驱动器,控制器

TI

德州仪器

更新时间:2025-11-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
24+
标准封装
8398
原厂直销,大量现货库存,交期快。价格优,支持账期
TI(德州仪器)
24+
WQFN-40
8708
原厂可订货,技术支持,直接渠道。可签保供合同
TI
23+
VQFN48
10000
全新原装假一赔十
TI/德州仪器
25+
WQFN40
32360
TI/德州仪器全新特价DRV8353SMRTAT即刻询购立享优惠#长期有货
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
TI(德州仪器)
24+
N/A
6000
原厂原装,价格优势,欢迎洽谈!
TI
2203+
WQFN-40
4184
只做原装,公司现货,提供一站式BOM配单服务!
TI(德州仪器)
23+
13650
公司只做原装正品,假一赔十
TI(德州仪器)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
TI(德州仪器)
2526+
WQFN-40-EP(6x6)
3000
全新、原装

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