| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DRV8353R | DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 |   | |
DRV8353R | 100-V Three-Phase Smart Gate Driver 文件：2.75807 Mbytes Page：87 Pages | TI 德州仪器 | | |
DRV8353R | 100-V Three-Phase Smart Gate Driver 文件：3.77637 Mbytes Page：90 Pages | TI 德州仪器 | | |
DRV8353R | 100-V Three-Phase Smart Gate Driver 文件：3.77743 Mbytes Page：91 Pages | TI 德州仪器 | | |
DRV8353R | 具有降压稳压器和电流分流放大器的最大 102V 三相智能栅极驱动器 | TI 德州仪器 | | |
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835x 100-V Three-Phase Smart Gate Driver 1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh | TI 德州仪器 | | ||
DRV835xF 100-V Three-Phase Smart Gate Driver 文件：3.65462 Mbytes Page：97 Pages | TI 德州仪器 | | ||
102-V max 3-phase Functional Safety Quality-Managed smart gate driver with buck regulator and 3x CSA | TI 德州仪器 | | ||
DRV835xF 100-V Three-Phase Smart Gate Driver 文件：3.65462 Mbytes Page：97 Pages | TI 德州仪器 | | ||
DRV835xF 100-V Three-Phase Smart Gate Driver 文件：3.65462 Mbytes Page：97 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77743 Mbytes Page：91 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77743 Mbytes Page：91 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77637 Mbytes Page：90 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：2.75807 Mbytes Page：87 Pages | TI 德州仪器 | | ||
封装/外壳：48-VFQFN 裸露焊盘 功能：控制器 - 换向，方向管理 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC MTR DRV MULTIPHAS 6-95V 48QFN 集成电路（IC） 电机驱动器，控制器 | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：2.75807 Mbytes Page：87 Pages | TI 德州仪器 | | ||
封装/外壳：48-VFQFN 裸露焊盘 功能：控制器 - 换向，方向管理 包装：管件 描述：IC MTR DRV MULTIPHAS 6-95V 48QFN 集成电路（IC） 电机驱动器，控制器 | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77637 Mbytes Page：90 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77743 Mbytes Page：91 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77743 Mbytes Page：91 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77743 Mbytes Page：91 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：2.75807 Mbytes Page：87 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77637 Mbytes Page：90 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77637 Mbytes Page：90 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：3.77743 Mbytes Page：91 Pages | TI 德州仪器 | | ||
100-V Three-Phase Smart Gate Driver 文件：2.75807 Mbytes Page：87 Pages | TI 德州仪器 | | ||
100 MHz-2.7 GHz RF Gain Block GENERAL DESCRIPTION The AD8353 is a broadband, fixed-gain, linear amplifier that operates at frequencies from 1 MHz up to 2.7 GHz. It is intended for use in a wide variety of wireless devices, including cellular, broadband, CATV, and LMDS/MMDS applications. FEATURES Fixed gain of 20 dB O | AD 亚德诺 | | ||
100 MHz-2.7 GHz RF Gain Block GENERAL DESCRIPTION The AD8353 is a broadband, fixed-gain, linear amplifier that operates at frequencies from 1 MHz up to 2.7 GHz. It is intended for use in a wide variety of wireless devices, including cellular, broadband, CATV, and LMDS/MMDS applications. FEATURES Fixed gain of 20 dB O | AD 亚德诺 | | ||
Wire-Thread-Inserts 文件：102.37 Kbytes Page：3 Pages | V-COIL | | ||
1 MHz to 2.7 GHz RF Gain Block 文件：349.51 Kbytes Page：16 Pages | AD 亚德诺 | | ||
RF Gain Block 文件：345.56 Kbytes Page：16 Pages | AD 亚德诺 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
VQFN48 |
7448 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI |
23+ |
VQFN48 |
10000 |
全新原装假一赔十 |
|||
23+ |
NA |
6800 |
原装正品,力挺实单 |
||||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TI(德州仪器) |
24+ |
N/A |
6000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
22+ |
5000 |
||||||
TI(德州仪器) |
23+ |
48-VFQFN 裸露焊盘 |
13650 |
公司只做原装正品,假一赔十 |
|||
TI(德州仪器) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
TI |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
TI |
23+ |
VQFN |
5000 |
全新原装,支持实单,非诚勿扰 |
DRV8353R芯片相关品牌
DRV8353R规格书下载地址
DRV8353R参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DRV8803
- DRV8802
- DRV8801
- DRV8800
- DRV8711
- DRV8704
- DRV8701
- DRV8662
- DRV8601
- DRV8437
- DRV8436
- DRV8432
- DRV8428
- DRV8426
- DRV8425
- DRV8424
- DRV8422
- DRV8412
- DRV8402
- DRV835X
- DRV8353SMRTAT
- DRV8353SM
- DRV8353S
- DRV8353RSRGZT.B
- DRV8353RSRGZT.A
- DRV8353RSRGZT
- DRV8353RSRGZR.B
- DRV8353RSRGZR.A
- DRV8353RSRGZR
- DRV8353RS
- DRV8353RHRGZT.B
- DRV8353RHRGZT.A
- DRV8353RHRGZT
- DRV8353RHRGZR.B
- DRV8353RHRGZR.A
- DRV8353RHRGZR
- DRV8353RH
- DRV8353RFSRGZR
- DRV8353RFHRGZR
- DRV8353RF
- DRV8353M
- DRV8353HRTAT.A
- DRV8353HRTAT
- DRV8353HRTARG4.A
- DRV8353HRTARG4
- DRV8353HRTAR.A
- DRV8353HRTAR
- DRV8353HMRTATG4.A
- DRV8353HMRTATG4
- DRV8353HMRTAT.A
- DRV8353HMRTAT
- DRV8353HM
- DRV8353H
- DRV8353FSRTARG4.A
- DRV8353FSRTARG4
- DRV8353FSRTAR.A
- DRV8353FSRTAR
- DRV8353FS
- DRV8353FHRTAR.A
- DRV8353FHRTAR
- DRV8353
- DRV8350
- DRV8332
- DRV832x
- DRV8323
- DRV8320
- DRV8316
- DRV8313
- DRV8312
- DRV8308
- DRV8307
- DRV8306
- DRV8305
- DRV8304
- DRV8303
- DRV8302
- DRV8301
- DRV8300
- DRV8220
- DRV8212
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DdatasheetPDF页码索引
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