DISH AUTOMOTIVE RECTIFIER

VOLTAGE RANGE 100 to 400 Volts CURRENT 25.0 Amperes FEATURES · Low Leakage · Low forward voltage drop · High current capability · High forward surge current capacity · Glass passivated chip

DISH AUTOMOTIVE RECTIFIER

VOLTAGE RANGE 100 to 400 Volts CURRENT 25.0 Amperes FEATURES · Low Leakage · Low forward voltage drop · High current capability · High forward surge current capacity · Glass passivated chip

25 Amp Automotive Rectifier 100 to 600 Volts

文件：283 Kbytes Page：2 Pages

螺丝二极管

Rectifiers

25 AMP OVERVOLTAGE TRANSIENT SUPPRESSORS

25 AMP OVERVOLTAGE TRANSIENT SUPPRESSORS

文件：92.65 Kbytes Page：1 Pages

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)