80V 175°C N-Channel Enhancement Mode MOSFET

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Wettable Flank for Improved O

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Wettable Flank for Improved O

80V 175°C Dual N-Channel Enhancement Mode MOSFET

T1/CEPT Extended Temperature Range SMD Dual Line Interface Module

Units matched to leading transceiver ICs. Meet requirements for T1, E1, CEPT and PRI ISDN over extended temperature range –40 to +85˚C.

PCI Express 16 Reed Relay Output Digital Interface

Features • Compliant with RoHS and WEEE directives • PCI Express X1 compliant • 16 Reed relay outputs (SPST) • Highly reliable 10VA DIP Reed relays • Power (+5V and +12V) and ground provided on DB78 board connector • Includes 72″ cable with DB78 Male connector to DB37 Male connector (Item#

Triple, 1.5 GHz Op Amp

GENERAL DESCRIPTION The AD8003 is a triple ultrahigh speed current feedback amplifier. Using ADI’s proprietary eXtra Fast Complementary Bipolar (XFCB) process, the AD8003 achieves a bandwidth of 1.5 GHz and a slew rate of 4300 V/µs. Additionally, the amplifier provides excellent dc precision with

Its a complete tool kit that fits in your palm.

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Triple, 1.5 GHz Op Amp

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